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For edges Found Datasheets File :: 10539    Search Time::1.265ms    
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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q163652A K7Q161852A
OCR Text ...rate DDR timing at clock rising edges only. * Two Input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches. * Single address bus. * Byte writable function. * Sepatate read/write control pin(R and W) * Simple d...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36

File Size 503.77K  /  17 Page

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    AK5352 AK5352-VF AKD5352 AKD5351

AKM[Asahi Kasei Microsystems]
Part No. AK5352 AK5352-VF AKD5352 AKD5351
OCR Text ...e 19 : Specified LRCK and FSYNC edges not to coincide with the rising edges of SCLK. Note 20 : The number of LRCK rising edges after PD brought high. The value is in master mode. In slave mode it becomes one LRCK clock(1/fs) longer. 0155...
Description Sampling 20 bit ADC
96kHz Sampling 20bit ADC
96kHz Sampling ## 20bit ADC

File Size 173.20K  /  19 Page

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    SONY[Sony Corporation]
Part No. CXK79M36C162GB-5 CXK79M36C162GB CXK79M36C162GB-33 CXK79M36C162GB-4
OCR Text ...rom both the rising and falling edges of CK, beginning one full cycle after the address and control signals are registered. During write operations, input data is registered twice, on both the rising and falling edges of CK, beginning one f...
Description From old datasheet system
18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)

File Size 208.15K  /  25 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KM732V599L KM732V599A
OCR Text ...ZZ) are sampled on rising clock edges. The start and duration of the burst access is controlled by CS1, ADSC, ADSP and ADV. The accesses are enabled with the chip select signals and output enabled signals. Wait states are inserted into the ...
Description 32Kx32 Synchronous SRAM

File Size 450.38K  /  15 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Part No. KM732V696L KM732V696
OCR Text ...ZZ) are sampled on rising clock edges. The start and duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins. The accesses are enabled with the chip select signals and output enabled signals. Wait states are in...
Description 64Kx32 Synchronous SRAM 64Kx32同步SRAM

File Size 463.09K  /  16 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KM732V789
OCR Text ...ZZ) are sampled on rising clock edges. The start and duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins. The accesses are enabled with the chip select signals and output enabled signals. Wait states are in...
Description 128Kx32 Synchronous SRAM

File Size 453.42K  /  15 Page

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    KM736V799

Samsung Semiconductor
Part No. KM736V799
OCR Text ...zz) are sampled on rising clock edges. the start and duration of the burst access is controlled by adsc , adsp and adv and chip select pins. the accesses are enabled with the chip select signals and output enabled signals. wait states...
Description 128Kx36 Synchronous SRAM

File Size 301.46K  /  15 Page

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    EL5420CL EL5420CL-T13 EL5420CL-T7 EL5420CR EL5420CR-T13 EL5420CR-T7 EL5420CS EL5420CS-T13 EL5420CS-T7 EL5220C EL5220CY E

Intersil, Corp.
ELANTEC[Elantec Semiconductor]
Part No. EL5420CL EL5420CL-T13 EL5420CL-T7 EL5420CR EL5420CR-T13 EL5420CR-T7 EL5420CS EL5420CS-T13 EL5420CS-T7 EL5220C EL5220CY EL5220CY-T13 EL5220CY-T7
OCR Text ... measured on rising and falling edges 2 EL5220C, EL5420C EL5220C, EL5420C 12MHz Rail-to-Rail Input-Output Op Amps Electrical Characteristics VS+ = 5V, VS-= 0V, R L = 10k and CL = 10pF to 2.5V, TA = 25C unless otherwise specifi...
Description 12MHz Rail-to-Rail Input-Output Op Amps 12MHz的轨到轨输入输出运算放大

File Size 274.67K  /  13 Page

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    EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8

ETRON[Etron Technology, Inc.]
ETRON[Etron Technology Inc.]
Part No. EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text ...ta outputs occur at both rising edges of CK and /CK. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin w...
Description 4M x 16 DDR Synchronous DRAM (SDRAM)

File Size 154.94K  /  26 Page

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    KM736V795

Samsung Semiconductor
Part No. KM736V795
OCR Text ...zz) are sampled on rising clock edges. the start and duration of the burst access is controlled by adsc , adsp and adv and chip select pins. the accesses are enabled with the chip select signals and output enabled signals. wait states...
Description 128Kx36 Synchronous SRAM

File Size 325.30K  /  15 Page

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