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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS128M4BT-6K
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| OCR Text |
...d data mask referenced to both edges of dqs ? burst lengths: 2, 4, or 8 ? cas latency: 2 / 2.5 (6k & 75b), 2.5 / 3 (6k & 5t) ? auto precharge option for each burst access ? auto refresh and self refresh modes ?7.8 s maximum average period... |
| Description |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
2,500.58K /
80 Page |
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it Online |
Download Datasheet
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-L
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| OCR Text |
...nced to both rising and falling edges of the clock. while all addresses and control inputs are latched on th e rising edges of the ck (fal ling edges of the /ck), data, data strobes and write data masks inputs are sampled on both rising an... |
| Description |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
235.08K /
29 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-JI
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| OCR Text |
...nced to both rising and falling edges of the clock. while all addresses and control inputs are latched on th e rising edges of the ck (fal ling edges of the /ck), data, data strobes and write data masks inputs are sampled on both rising an... |
| Description |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
235.26K /
29 Page |
View
it Online |
Download Datasheet |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS16M16BS-6KL
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| OCR Text |
...d data mask referenced to both edges of dqs burst lengths: 2, 4, or 8 cas latency: 2.5 auto precharge option for each burst access auto refresh and self refresh modes 7.8 s maximum average periodic refresh interval 2.5v (sstl_2... |
| Description |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
2,290.92K /
80 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
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| OCR Text |
...* Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : ... |
| Description |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
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| File Size |
195.42K /
18 Page |
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it Online |
Download Datasheet |
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Price and Availability
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