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For edges Found Datasheets File :: 10538 Search Time::1.297ms
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				CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1522KV18-250BZI CY7C1529KV18-300BZXI CY7C1529KV18-167BZXC
OCR Text	...e ddr timing ? sram uses rising edges only two input clocks for output data (c and c ) to minimize clock skew and flight time mismatches echo clocks (cq and cq ) simplify data capture in high speed systems synchronous internally self t...
Description	8M X 8 DDR SRAM, 0.45 ns, PBGA165 8M X 9 DDR SRAM, 0.45 ns, PBGA165 8M X 9 DDR SRAM, 0.5 ns, PBGA165
File Size	591.02K / 32 Page	View it Online	Download Datasheet

				NANYA TECHNOLOGY CORP
Part No.	NT5DS16M16BW-6K
OCR Text	...d data mask referenced to both edges of dqs ? burst lengths: 2, 4, or 8 ? cas latency: 2, 2.5 ? auto precharge option for each burst access ? auto refresh and self refresh modes ? 7.8 m s maximum average periodic refresh interval ? 2.5v (...
Description	16M X 16 DDR DRAM, 0.7 ns, PBGA60
File Size	1,341.90K / 80 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYMD132G725EM4-H
OCR Text	...nced to both rising and falling edges of di fferential clock inputs. while all addresses and control inputs are latched on the rising edges of the clock, data, data st robes and write data masks inputs are sampled on both ris- ing and fall...
Description	Registered DDR SDRAM DIMM
File Size	220.61K / 17 Page	View it Online	Download Datasheet

				Alliance Semiconductor
Part No.	AS4C4M16S-6TIN
OCR Text	... and is latched at the positive edges of clk. when ras# and cs# are asserted "low" and cas# is asserted "high," either the bankactivate command or t he precharge command is selected by the we# signal. when the we# is as...
Description	64Mb / 4M x 16 bit Synchronous DRAM
File Size	3,342.14K / 53 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1916JV18-300BZXI CY7C1916JV18-300BZC CY7C1916JV18-300BZI CY7C1916JV18-300BZXC CY7C1320JV18-300BZC CY7C1320JV18-300BZXC CY7C1320JV18-300BZI CY7C1320JV18-300BZXI
OCR Text	...e ddr timing ? sram uses rising edges only two input clocks for ou tput data (c and c ) to minimize clock skew and flight time mismatches echo clocks (cq and cq ) simplify data capture in high-speed systems synchronous internally self-...
Description	18-Mbit DDR-II SRAM 2-Word Burst Architecture
File Size	407.82K / 26 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	AD586 AD586A AD586AR AD586B AD586BR AD586J AD586JCCHIPS AD586JCHIPS AD586JN AD586JQ AD586JR AD586K AD586KN AD586KQ AD586KR AD586L AD586LQ AD586LR AD586M AD586MN AD586S AD586SQ AD586T AD586TQ AD586LN
OCR Text	...ked dice for most applications. edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-way through the die. In contrast to scribed dice, this technique provides a more uniform die shape and size. T...
Description	High Precision 5 V Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDIP8 High Precision 5 V Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, CDIP8 High Precision 5 V Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO8 High Precision 5 V Reference 高精 V参
File Size	196.90K / 8 Page	View it Online	Download Datasheet

				ANALOG DEVICES INC Analog Devices, Inc.
Part No.	AD587 AD587JCHIPS AD587JN AD587JQ AD587JR AD587KN AD587KQ AD587KR AD587LN AD587LQ AD587SQ AD587TQ AD587UQ
OCR Text	...ked dice for most applications. edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges halfway through the die. In contrast to scribed dice, this technique provides a more uniform die shape and size . T...
Description	High Precision 10 V Reference
File Size	115.88K / 8 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYMD512G726AK4-H
OCR Text	...nced to both rising and falling edges of diff erential clock inputs. while all addresses and control inputs are latched on the rising edges of the clock, data, data st robes and write data masks inputs are sampled on both ris- ing and falli...
Description	Registered DDR SDRAM DIMM
File Size	215.80K / 17 Page	View it Online	Download Datasheet

				CYPRESS[Cypress Semiconductor]
Part No.	CY7C1916BV18-250BZC CY7C1316BV18 CY7C1316BV18-167BZC CY7C1316BV18-200BZC CY7C1316BV18-250BZC CY7C1318BV18 CY7C1318BV18-167BZC CY7C1318BV18-200BZC CY7C1318BV18-250BZC CY7C1320BV18 CY7C1320BV18-167BZC CY7C1320BV18-200BZC CY7C1320BV18-250BZC CY7C1916BV18 CY7C1916BV18-167BZC CY7C1916BV18-200BZC
OCR Text	... DDR timing -- SRAM uses rising edges only * Two output clocks (C and C) account for clock skew and flight time mismatching * Echo clocks (CQ and CQ) simplify data capture in high-speed systems * Synchronous internally self-timed writes * 1...
Description	18-Mbit DDR-II SRAM 2-Word Burst Architecture
File Size	252.26K / 24 Page	View it Online	Download Datasheet

For edges Found Datasheets File :: 10538 Search Time::1.297ms
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