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BTS41 SI106 AAT8303 S2561A ENA1315A HC528 05000 08126
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    Philips
Part No. HR7638
OCR Text ...void touching the sharp cutting edges of the blades and inserts, especially when the appliance is plugged in. ? if one of the blades get stuck, unplug the appliance before removing the ingredients that are blocking the blades. ? let hot ing...
Description Food processor User Manual

File Size 3,339.57K  /  128 Page

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    MC145532 MC145532L MC145532DW

Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MC145532 MC145532L MC145532DW
OCR Text ...o DDI on the subsequent falling edges of DDC following the DIE rising edge. The frequency of DIE may not exceed 8 kHz. DECODER OUTPUT DDO Decoder Data Output (Pin 2) PCM data are available in a serial format from this output, which operates...
Description ADPCM Transcoder

File Size 220.43K  /  16 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4H560438E-NC_LB0 K4H560438E-NC_LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560438E-NCB3 K4H560438E-NLA2 K4H560438E-NLB0 K4H560438E-NLB3 K4H560838E-NC_LA2 K4H560838E-NC_LB0 K4H560838E-NC_LB3 K4H560838E-NCA2 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLA2 K4H560838E-NLB0
OCR Text ...* Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : ...
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

File Size 212.16K  /  24 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-ULB3 K4H560438E-UC K4H560438E-UC_LA2 K4H560438E-UC_LAA K4H560438E-UC_LB0 K4H560438E-UC_LB3 K4H560438E-UCA2 K4H560438E-UCAA K4H560438E-UCB0 K4H560438E-UCB3 K4H560438E-ULA2 K4H560438E-ULAA K4H560438E-ULB0 K4H560438E-ULB3 K4H560838E-UC_LA2 K4H560838E-UC_LAA K4H560838E-UC_LB0 K4H560838E-UC_LB3 K4H560838E-UCA2 K4H560838E-UCAA K4H560838E-UCB0 K4H560838E-UCB3 K4H560838E-ULA2 K4H560838E-ULAA K4H560838E-ULB0
OCR Text ...* Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : ...
Description 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

File Size 294.24K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-VLB3 K4H560438E-VC K4H560438E-VC_LA2 K4H560438E-VC_LB0 K4H560438E-VC_LB3 K4H560438E-VCA2 K4H560438E-VCB0 K4H560438E-VCB3 K4H560438E-VLA2 K4H560438E-VLB0 K4H560438E-VLB3 K4H560838E-VC_LA2 K4H560838E-VC_LB0 K4H560838E-VC_LB3 K4H560838E-VCA2 K4H560838E-VCB0 K4H560838E-VCB3 K4H560838E-VLA2 K4H560838E-VLB0
OCR Text ...* Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : ...
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)

File Size 294.46K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4H560438E-ZC_LB0 K4H560438E-ZC_LB3 K4H560438E-ZCA2 K4H560438E-ZCB0 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560438E-ZLB0 K4H560438E-ZLB3 K4H560838E-ZC_LA2 K4H560838E-ZC_LB0 K4H560838E-ZC_LB3 K4H560838E-ZCA2 K4H560838E-ZCB0 K4H560838E-ZCB3 K4H560838E-ZLA2 K4H560838E-ZLB0
OCR Text ...* Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : ...
Description 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

File Size 355.74K  /  23 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M-14 K7A403200M-15
OCR Text ...ZZ) are sampled on rising clock edges. The start and duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins. The accesses are enabled with the chip select signals and output enabled signals. Wait states are in...
Description 128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM

File Size 399.23K  /  15 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU28822LT-K
OCR Text ...nced to both rising and falling edges of the clock. while all addresses and control inputs are latched on the rising edges of the clock(falling edges of the clk ), data(dq), data strobes(dqs) and write data masks(dm) inputs are sampled on ...
Description 16M X 8 DDR DRAM, PDSO66

File Size 84.91K  /  10 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7D323674A-HGC40 K7D321874A K7D321874A-HC33 K7D321874A-HC37 K7D321874A-HC40 K7D321874A-HGC33 K7D321874A-HGC37 K7D321874A-HGC40 K7D323674A K7D323674A-HC33 K7D323674A-HC37 K7D323674A-HC40 K7D323674A-HGC33 K7D323674A-HGC37
OCR Text ...output registers off the rising edges of K clock for SDR read operations and off the rising and falling edges of K clock for DDR read operations. Free running echo clocks are supported which are representative of data output access time for...
Description 32Mb A-die DDR SRAM Specification

File Size 479.56K  /  19 Page

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