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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1277    Search Time::1.5ms    
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    PTFA182001E

Infineon Technologies AG
Part No. PTFA182001E
OCR Text ...n the ptfa182001e is a 200-watt ldmos fet intended for edge applications from 1805 to 1880 mhz. features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. manufactured with infineon's adva...
Description Thermally-Enhanced High Power RF ldmos FET 200 W, 1805 - 1880 MHz

File Size 252.37K  /  10 Page

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    PTFA181001GL PTFA181001HL

Infineon Technologies AG
Part No. PTFA181001GL PTFA181001HL
OCR Text ...l and ptfa181001gl are 100-watt ldmos fets designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. m...
Description Thermally-Enhanced High Power RF ldmos FETs 100 W, 1805 ?1880 MHz

File Size 316.73K  /  11 Page

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    PTFA181001GL09

Infineon Technologies AG
Part No. PTFA181001GL09
OCR Text ... the ptfa181001gl is a 100-watt ldmos fet designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally- enhanced open-cavity package with copper flange. man...
Description Thermally-Enhanced High Power RF ldmos FET 100 W, 1805-1880 MHz

File Size 401.56K  /  10 Page

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    PTFA181001E

Infineon Technologies AG
Part No. PTFA181001E
OCR Text ...1e and ptfa181001f are 100-watt ldmos fets designed for edge and wcdma power amplifier applications in the dcs band. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured w...
Description Thermally-Enhanced High Power RF ldmos FETs 100 W, 1805 ?1880 MHz

File Size 399.72K  /  11 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22LS-40P BLF6G22L-40P
OCR Text ldmos power transistor for base station app lications at frequencies from 2110 mhz to 2170 mhz and 1805 mhz to 1880 mhz. [1] the performance is tested on the class ab demo board as depicted in figure 11 . [2] test signal: 3gpp; test mod...
Description Power ldmos transistor BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;

File Size 151.37K  /  16 Page

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    PTFB211803EL PTFB211803FL

Infineon Technologies AG
Part No. PTFB211803EL PTFB211803FL
OCR Text ...hermally-enhanced high power rf ldmos fets 180 w, 2110 C 2170 mhz description the ptfb211803el and ptfb211803fl are 180-watt ldmos fets intended for use in multi-standard cellular power amplifer applications in the 2110 to 2170 mhz freque...
Description Thermally-Enhanced High Power RF ldmos FETs 180 W, 2110 ?2170 MHz

File Size 490.86K  /  14 Page

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    PTFB211501E PTFB211501F

Infineon Technologies AG
Part No. PTFB211501E PTFB211501F
OCR Text ldmos FETs 150 W, 2110 - 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, ldmos FETs designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching...
Description Thermally-Enhanced High Power RF ldmos FETs 150 W, 2110 鈥?2170 MHz

File Size 352.84K  /  13 Page

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    BLF2047L BLF2047L_90 BLF2047L/90

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLF2047L BLF2047L_90 BLF2047L/90
OCR Text ldmos transistor Product specification Supersedes data of 1999 Apr 01 1999 Dec 06 Philips Semiconductors Product specification UHF power ldmos transistor FEATURES * High power gain * Easy power control * Excellent ruggedness * So...
Description UHF power ldmos transistor

File Size 93.48K  /  12 Page

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    MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978-0075LF-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978-0075LF-15
OCR Text ldmos Pulsed Power Transistor 75W, 978 MHz, 400s Pulse, 1% Duty Features * * * * * Gold ldmos microwave power transistor Common source configuration Broadband Class AB operation RoHS Compliant Avionics applications specifically designed f...
Description ldmos Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
ldmos Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
   ldmos Pulsed Power Transistor

File Size 161.03K  /  5 Page

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    MAPL-000822-002PP

M/A-COM Technology Solutions, Inc.
Part No. MAPL-000822-002PP
OCR Text ldmos RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V Product Image Designed for broadband commercial applications up to 2.2GHz M/A-COM Products Preliminary - Rev. 12/07 * * * * High gain, high efficiency and high linearity...
Description ldmos RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V

File Size 270.24K  /  10 Page

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For ldmos Found Datasheets File :: 1277    Search Time::1.5ms    
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