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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1271    Search Time::3.469ms    
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    Infineon Technologies
Part No. PTFA142401EL
OCR Text ...l and ptfa142401fl are 240-watt ldmos fets designed for dvb and dab applications in the 1450 to 1500 mhz frequency band. features include internal i/o matching and thermally- enhanced packages with slotted or earless flanges. manufactured w...
Description Thermally-Enhanced High Power RF ldmos FET

File Size 456.56K  /  10 Page

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    PTFB091507FH

Infineon Technologies AG
Part No. PTFB091507FH
OCR Text ...hermally-enhanced high power rf ldmos fet 160 w, 28 v, 920 ? 960 mhz description the ptfb091507fh is an ldmos fet intended for use in multi- standard cellular power ampli? er applications in the 920 to 960 mhz frequency band. features incl...
Description Thermally-Enhanced High Power RF ldmos FET 160 W, 28 V, 920-960 MHz

File Size 1,788.17K  /  13 Page

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    NXP Semiconductors N.V.
Part No. BLF6G13L-250P BLF6G13LS-250P
OCR Text ldmos power transistor intended for cw applications at a frequency of 1.3 ghz. 1.2 features and benefits ? typical cw performance at a frequency of 1.3 ghz, a supply voltage of 50 v, an i dq of 100 ma: ? output power = 250 w ? power g...
Description Product description250 W ldmos power transistor intended for CW applications at a frequency of 1.3 GHz.
Power ldmos transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;

File Size 126.07K  /  14 Page

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    BLF4G20LS-110B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BLF4G20LS-110B
OCR Text ldmos transistor Rev. 01 -- 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W ldmos power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performan...
Description From old datasheet system
UHF power ldmos transistor 110 W ldmos power transistor for base station applications at frequencies

File Size 100.62K  /  12 Page

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    BLF6G10S-45

Philips Semiconductors
Part No. BLF6G10S-45
OCR Text ldmos power transistor for base station applications at frequencies from 800 mhz to 1000 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz 1.2 features n typical...
Description Power ldmos Transistor

File Size 113.04K  /  10 Page

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    DS187006

Maxim Integrated Products
Part No. DS187006
OCR Text ldmos rf power-amplifier applica- tions. it uses lookup tables (luts) to control 256-posi- tion potentiometers based on the amplifier? temperature and drain voltage or current (or other external monitored signal). with its internal temperat...
Description ldmos RF Power-Amplifier Bias Controller

File Size 370.73K  /  28 Page

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    NXP Semiconductors N.V.
Part No. BLL6H0514L-130 BLL6H0514LS-130
OCR Text ldmos transistor intended for pulsed applications in the 0.5 ghz to 1.4 ghz range. 1.2 features and benefits ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high...
Description ldmos driver transistor BLL6H0514L-130<SOT1135A (CDFM2)|<<http://www.nxp.com/packages/SOT1135A.html<1<Always Pb-free,;

File Size 100.58K  /  13 Page

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    NXP Semiconductors N.V.
Part No. BLF7G27LS-75P BLF7G27L-75P
OCR Text ldmos power transistor for base station applications at frequencies from 2300 mhz to 2700 mhz. [1] single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccd...
Description Product description75 W ldmos power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.
Power ldmos transistor BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;

File Size 135.66K  /  13 Page

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    Philips
Part No. BLF0810S-180 BLF0810-180 BLF0810-180_S_N_4
OCR Text ldmos transistors Preliminary specification 2002 Aug 02 Philips Semiconductors Preliminary specification Base station ldmos transistors FEATURES * Easy power control * Excellent ruggedness * High power gain * Excellent thermal st...
Description Base station ldmos transistors
From old datasheet system

File Size 129.73K  /  14 Page

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    Philips
Part No. BLF0810S-90 BLF0810-90 BLF0810-90_S_N_1
OCR Text ldmos transistors Preliminary specification 2002 Mar 18 Philips Semiconductors Preliminary specification Base station ldmos transistors FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside ...
Description Base station ldmos transistors
From old datasheet system

File Size 140.94K  /  13 Page

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For ldmos Found Datasheets File :: 1271    Search Time::3.469ms    
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