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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1277    Search Time::1.375ms    
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    NXP Semiconductors N.V.
Part No. BLF6G38LS-100
OCR Text ldmos power transistor for base st ation applications at frequencies from 3400 mhz to 3600 mhz. [1] p l(m) stands for peak output power. [2] single carrier n-cdma with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). pa...
Description WiMAX power ldmos transistor

File Size 120.00K  /  13 Page

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    AGR09045E AGR09045EF AGR09045EU

TriQuint Semiconductor
Part No. AGR09045E AGR09045EF AGR09045EU
OCR Text ...used metal oxide semiconductor (ldmos) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple...
Description 45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

File Size 284.85K  /  7 Page

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    AGR09030E AGR09030EF AGR09030EU

TriQuint Semiconductor
Part No. AGR09030E AGR09030EF AGR09030EU
OCR Text ...used metal oxide semiconductor (ldmos) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple...
Description 30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

File Size 288.58K  /  7 Page

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    MAX1386

Maxim Integrated Products
Part No. MAX1386
OCR Text ...rol bias conditions for dual rf ldmos power devices found in cellular base stations. each device includes a high-side cur- rent-sense amplifier with programmable gains of 2, 10, and 25 to monitor ldmos drain current over the 20ma to 5a rang...
Description (MAX1385 / MAX1386) Dual RF ldmos Bias Controllers

File Size 585.63K  /  52 Page

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    BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112

NXP Semiconductors N.V.
Part No. BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112
OCR Text ldmos S-band radar power transistor Rev. 03 -- 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W ldmos power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical ...
Description ldmos S-band radar power transistor

File Size 124.09K  /  12 Page

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    BLF2425M7L140 BLF2425M7LS140 BLF2425M7L140-15

NXP Semiconductors
Part No. BLF2425M7L140 BLF2425M7LS140 BLF2425M7L140-15
OCR Text ldmos power transistor for industrial, sc ientific and medical (ism) applications at frequencies from 2400 mhz to 2500 mhz. the blf2425m7l140 and blf2425m7ls140 are designed for high-power cw applications and are assembled in high perform...
Description Power ldmos transistor

File Size 294.65K  /  11 Page

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    BLF6G27LS-75 BLF6G27-75

NXP Semiconductors N.V.
Part No. BLF6G27LS-75 BLF6G27-75
OCR Text ldmos transistor Rev. 01 -- 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanc...
Description Product description75 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power ldmos transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (ldmosT)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;

File Size 99.11K  /  14 Page

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    BLF6G27LS-135 BLF6G27-135

NXP Semiconductors N.V.
Part No. BLF6G27LS-135 BLF6G27-135
OCR Text ldmos transistor Rev. 02 -- 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance T...
Description Product description135 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power ldmos transistor BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;

File Size 84.73K  /  13 Page

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    AGR09130E AGR09130EF AGR09130EU

TriQuint Semiconductor
Part No. AGR09130E AGR09130EF AGR09130EU
OCR Text ...used metal oxide semiconductor (ldmos) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple...
Description 130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET

File Size 414.08K  /  10 Page

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    MAPLST2122-030CF

M/A-COM Technology Solutions, Inc.
Part No. MAPLST2122-030CF
OCR Text ldmos RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V Product Image Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz frequency band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. * 30W o...
Description ldmos RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V

File Size 179.50K  /  7 Page

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For ldmos Found Datasheets File :: 1277    Search Time::1.375ms    
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