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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1271    Search Time::3.047ms    
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    Intersil, Corp.
Part No. X9470V24I
OCR Text ...t roller ic for class a and ab ldmos power amplifiers ? adaptive system on chip solution ? bias current calibration to better than 4% using reference trim dcp ? automatic bias point tracking and calibration ? i dq sensing and tracking ...
Description RF Power Amplifier (PA) Bias Controller SPECIALTY TELECOM CIRCUIT, PDSO24

File Size 376.11K  /  24 Page

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    PTFB241402F

Infineon Technologies AG
Part No. PTFB241402F
OCR Text ...350 mhz 2380 mhz high power rf ldmos field effect transistor 140 w, 2300 ? 2400 mhz description the ptfb241402f integrates two ldmos fets into one open-cavity ceramic package. it is designed for cellular amplifier applications in the 2300 ...
Description High Power RF ldmos Field Effect Transistor 140 W, 2300 ?2400 MHz

File Size 546.96K  /  13 Page

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    PTFB212503EL PTFB212503FL

Infineon Technologies AG
Part No. PTFB212503EL PTFB212503FL
OCR Text ... ptfb212503fl are 240-watt ldmos fets intended for use in multi-standard cellular power amplifer applications in the 2110 to 2170 mhz frequency band. features include input and output matching, high gain, wide signal ban...
Description Thermally-Enhanced High Power RF ldmos FETs 240 W, 2110-2170 MHz

File Size 511.41K  /  14 Page

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    PTFB211503EL PTFB211503FL

Infineon Technologies AG
Part No. PTFB211503EL PTFB211503FL
OCR Text ...hermally-enhanced high power rf ldmos fets 150 w, 2110 C 2170 mhz description the ptfb211503el and ptfb211503fl are thermally-enhanced, 150-watt, ldmos fets designed for cellular power amplifier applications in the 2110 ...
Description Thermally-Enhanced High Power RF ldmos FETs 150 W, 2110 ?2170 MHz

File Size 505.51K  /  14 Page

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    L6569A L6569AD L6569D L6569

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. L6569A L6569AD L6569D L6569
OCR Text ...ivers On resistance of Boostrap ldmos Boostrap Voltage before UVLO 1 6 Average Current from Vs Oscillation Frequency VS = 8.2 No Load, fs = 60KHz RT = 12K; CT = 1nF 57 2.5 Test Condition IRF = 1mA IRF = -1mA Min. VS -0.05 Typ. Max. V...
Description HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR 高压半桥驱动器,振荡

File Size 108.80K  /  13 Page

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    PTFB193404F

Infineon Technologies AG
Part No. PTFB193404F
OCR Text ...hermally-enhanced high power rf ldmos fets 340 w, 30 v, 1930 ? 1990 mhz description the ptfb193404f is a 340-watt ldmos fet intended for use in multi- standard cellular power ampli? er applications in the 1930 to 1990 mhz frequency band. f...
Description Thermally-Enhanced High Power RF ldmos FETs 340 W, 30 V, 1930-1990 MHz

File Size 248.84K  /  14 Page

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    PTFB191501E PTFB191501F

Infineon Technologies AG
Part No. PTFB191501E PTFB191501F
OCR Text ...1e and ptfb191501f are 150-watt ldmos fets designed for single- and two-carrier wcdma and cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced, rohs-compliant package with slotted and e...
Description Thermally-Enhanced High Power RF ldmos FETs 150 W, 1930 ?1990 MHz

File Size 288.13K  /  15 Page

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    PTFB090901FA PTFB090901EA

Infineon Technologies AG
Part No. PTFB090901FA PTFB090901EA
OCR Text ...hermally-enhanced high power rf ldmos fets 90 w, 28 v, 920 ? 960 mhz description the ptfb090901ea and ptfb090901fa are 90-watt ldmos fets intended for use in multi-standard cellular power ampli? er applications in the 920 to 960 mhz frequ...
Description Thermally-Enhanced High Power RF ldmos FETs 90 W, 28 V, 920 . 960 MHz

File Size 227.02K  /  14 Page

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    PTFA190451E PTFA190451F

Infineon Technologies AG
Part No. PTFA190451E PTFA190451F
OCR Text ...d, 45-watt, internally matched ldmos fets designed for wcdma, td-scdma and other cellular standards in the 1930 to 1990 mhz frequency band. these devices are available in thermally-enhanced packages with eared or earless flanges. manufact...
Description Thermally-Enhanced High Power RF ldmos FETs 45 W, 1930 - 1990 MHz

File Size 365.40K  /  10 Page

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    PTFA182001E

Infineon Technologies AG
Part No. PTFA182001E
OCR Text ...n the ptfa182001e is a 200-watt ldmos fet intended for edge applications from 1805 to 1880 mhz. features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. manufactured with infineon's adva...
Description Thermally-Enhanced High Power RF ldmos FET 200 W, 1805 - 1880 MHz

File Size 252.37K  /  10 Page

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