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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1853    Search Time::7.422ms    
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    AFIC31025GN AFIC31025N

NXP Semiconductors
Part No. AFIC31025GN AFIC31025N
OCR Text ldmos integrated power amplifiers the afic31025n integrated circuit is designed with on--chip matching that makes it usable from 2400 to 3100 mhz. this multi--stage device is designed to support cw and pulse applications. typical performanc...
Description RF ldmos Integrated Power Amplifiers

File Size 349.54K  /  12 Page

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    Infineon Technologies A...
Part No. PTFA180701E PTFA180701EV4R0 PTFA180701EF PTFA180701EV4R250XTMA1 PTFA180701F PTFA180701FV4R0 PTFA180701FV4R0XTMA1 PTFA180701FV4R250
OCR Text ...01e and ptfa180701f are 70-watt ldmos fets designed for gsm and gsm edge power amplifier applications in the 1805 mhz to 1880 mhz band. features include input and output matching, and thermally- enhanced packages with slotted or earless fla...
Description Thermally-Enhanced High Power RF ldmos FETs

File Size 4,141.56K  /  11 Page

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    A2T18S260-12S A2T18S260-12SR3

NXP Semiconductors
Part No. A2T18S260-12S A2T18S260-12SR3
OCR Text ldmos transistor n--channel enhancement--mode lateral mosfet this 50 w rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 mhz. 1800 mhz ? typical single--carrier w--cdma...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 742.90K  /  18 Page

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    A2I25D025NR1

NXP Semiconductors
Part No. A2I25D025NR1
OCR Text ldmos wideband integrated power amplifiers the a2i25d025n wideband integrated circuit is designed with on--chip matching that makes it usable from 2100 to 2900 mhz. this multi--stage structure is rated for 26 to 32 v operation and covers al...
Description RF ldmos Wideband Integrated Power Amplifiers

File Size 725.32K  /  19 Page

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    AFV09P350-04GNR3 AFV09P350-04N AFV09P350-04NR3

NXP Semiconductors
Part No. AFV09P350-04GNR3 AFV09P350-04N AFV09P350-04NR3
OCR Text ldmos transistors n--channel enhancement--mode lateral mosfets these 100 w symmetrical doherty rf power ldmos transistors are designed for cellular base station applications covering the frequency range of 720 to 960 mhz. ? typical doherty ...
Description RF Power ldmos Transistors

File Size 497.39K  /  20 Page

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    MC33690DW MC33690

Motorola, Inc
Part No. MC33690DW MC33690
OCR Text ...ies combination of high voltage ldmos and low voltage PMOS transistors to provide regulation. An external low ESR capacitor is required for the regulator stability. The maximum average current is limited by the power dissipation capability ...
Description STANDALONE TAG READER CIRCUIT

File Size 219.72K  /  24 Page

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    Infineon Technologies A...
Part No. PTFB201402FC PTFB201402FCV1R0XTMA1 PTFB201402FCV1R250 PTFB201402FCV1R250XTMA1
OCR Text ... C38.5 C33 dbc high power rf ldmos field effect transistor 140 w, 28 v, 2010 C 2025 mhz description the ptfb201402fc integrates two 70 w ldmos fets into one open-cavity ceramic package. it is designed primarily for doherty cel ...
Description High Power RF ldmos Field Effect Transistor

File Size 439.17K  /  14 Page

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    MRF13750HS

NXP Semiconductors
Part No. MRF13750HS
OCR Text ldmos transistors n--channel enhancement--mode lateral mosfets these 750 w cw transistors are designed for industrial, scientific and medical (ism) applications in the 700 to 1300 mhz frequency range. the transistors are capable of cw or pu...
Description RF Power ldmos Transistors

File Size 501.73K  /  19 Page

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    PTVA084007NF

Cree, Inc
Part No. PTVA084007NF
OCR Text ...hermally-enhanced high power rf ldmos fet 370 w, 48 v, 755 C 805 mhz features ? broadband internal input and output matching ? target cw performance, 805 mhz, 48 v, single side - output power at p 3db = 370 w - effciency = 64% - gain...
Description Thermally-Enhanced High Power RF ldmos FET 370 W, 48 V, 755 ?805 MHz

File Size 370.57K  /  8 Page

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    Infineon Technologies A...
Part No. PTVA084007NF
OCR Text ...hermally-enhanced high power rf ldmos fet 370 w, 48 v, 755 C 805 mhz features ? broadband internal input and output matching ? target cw performance, 805 mhz, 48 v, single side - output power at p 3db = 370 w - effciency = 64% - gain...
Description Thermally-Enhanced High Power RF ldmos FET 370 W, 48 V, 755 ?805 MHz

File Size 407.24K  /  8 Page

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