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  ldmos Datasheet PDF File

For ldmos Found Datasheets File :: 1292    Search Time::2.078ms    
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    MRFIC0914

MOTOROLA[Motorola, Inc]
Part No. MRFIC0914
OCR Text ldmos Integrated Power Amplifier MRFIC0914 900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT This integrated circuit is intended for two-way paging applications and for other Industrial, Scientific and Medical (ISM) at ...
Description 900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT

File Size 125.23K  /  6 Page

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    PTFB090901FA PTFB090901EA

Infineon Technologies AG
Part No. PTFB090901FA PTFB090901EA
OCR Text ...hermally-enhanced high power rf ldmos fets 90 w, 28 v, 920 ? 960 mhz description the ptfb090901ea and ptfb090901fa are 90-watt ldmos fets intended for use in multi-standard cellular power ampli? er applications in the 920 to 960 mhz frequ...
Description Thermally-Enhanced High Power RF ldmos FETs 90 W, 28 V, 920 . 960 MHz

File Size 227.02K  /  14 Page

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    PTFA190451E PTFA190451F

Infineon Technologies AG
Part No. PTFA190451E PTFA190451F
OCR Text ...d, 45-watt, internally matched ldmos fets designed for wcdma, td-scdma and other cellular standards in the 1930 to 1990 mhz frequency band. these devices are available in thermally-enhanced packages with eared or earless flanges. manufact...
Description Thermally-Enhanced High Power RF ldmos FETs 45 W, 1930 - 1990 MHz

File Size 365.40K  /  10 Page

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    PTFA182001E

Infineon Technologies AG
Part No. PTFA182001E
OCR Text ...n the ptfa182001e is a 200-watt ldmos fet intended for edge applications from 1805 to 1880 mhz. features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. manufactured with infineon's adva...
Description Thermally-Enhanced High Power RF ldmos FET 200 W, 1805 - 1880 MHz

File Size 252.37K  /  10 Page

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    PTFA181001GL PTFA181001HL

Infineon Technologies AG
Part No. PTFA181001GL PTFA181001HL
OCR Text ...l and ptfa181001gl are 100-watt ldmos fets designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. m...
Description Thermally-Enhanced High Power RF ldmos FETs 100 W, 1805 ?1880 MHz

File Size 316.73K  /  11 Page

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    PTFA181001GL09

Infineon Technologies AG
Part No. PTFA181001GL09
OCR Text ... the ptfa181001gl is a 100-watt ldmos fet designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally- enhanced open-cavity package with copper flange. man...
Description Thermally-Enhanced High Power RF ldmos FET 100 W, 1805-1880 MHz

File Size 401.56K  /  10 Page

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    MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
OCR Text ...D The Wideband IC Line RF ldmos Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) ldmos IC technology an...
Description GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF ldmos Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF ldmos Wideband Integrated Power Amplifiers
RF ldmos Wideband Integrated Power Amplifiers

File Size 579.33K  /  12 Page

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    MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230

MOTOROLA[Motorola, Inc]
Part No. MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230
OCR Text ...D The Wideband IC Line RF ldmos Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) ldmos IC techn...
Description MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF ldmos Wideband Integrated Power Amplifiers
RF ldmos Wideband Integrated Power Amplifiers

File Size 656.88K  /  12 Page

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    Motorola
Part No. MW5IC2030
OCR Text ldmos Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) ldmos IC technology and integrates a multi - stage stru...
Description GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF ldmos Wideband Integrated Power Amplifier 

File Size 442.03K  /  12 Page

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    BLA1011-10

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLA1011-10
OCR Text ldmos transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics ldmos transistor FEATURES * High power gain * Easy power control * Excellent ruggedness * Sou...
Description Avionics ldmos transistor

File Size 66.48K  /  9 Page

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For ldmos Found Datasheets File :: 1292    Search Time::2.078ms    
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