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8.5ns Datasheet PDF File

For 8.5ns Found Datasheets File :: 495 Search Time::0.859ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6F2008S2E-F K6F2008S2E
OCR Text	...al(-40~85C) 2.3~2.7V 701)/85ns 32-TSOP1-0813.4F 1. The parameter is measured with 30pF test load. 2. Typical value are measured at VCC=2.5V, TA=25C, and not 100% tested. PIN DESCRIPTION A11 A9 A8 A13 WE CS2 A15 VCC A17 A16 A...
Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
File Size	129.58K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X0808T1D K6X0808T1D-YQ85 K6X0808T1D-B K6X0808T1D-F K6X0808T1D-GB70 K6X0808T1D-GB85 K6X0808T1D-GF70 K6X0808T1D-GF85 K6X0808T1D-GQ70 K6X0808T1D-GQ85 K6X0808T1D-NB70 K6X0808T1D-NB85 K6X0808T1D-NF70 K6X0808T1D-NF85 K6X0808T1D-Q K6X0808T1D-YB70 K6X0808T1D-YF70 K6X0808T1D-YF85 K6X0808T1D-YQ70 K6X0808T1D-YB85
OCR Text	...omotive(-40~125C) 2.7~3.6V 701)/85ns 10A 25mA 28-SOP-450, 28-TSOP1-0813.4F Operating (ICC2, Max) PKG Type K6X0808T1D-B Industrial(0~70C) 28-SOP-450, 28-TSOP1-0813.4F/R 1. The parameters are tested with 30pF test load PIN...
Description	32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
File Size	152.17K / 9 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A-BI85 K1S1616B1A-FI70 K1S1616B1A-FI85
OCR Text	...ial(-40~85C) 1.7V~2.1V 70/85ns 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A LB OE A0 A1 A2 CS2 Vcc Vss B I/O9 UB A3 A4 CS1 ...
Description	1Mx16 bit Uni-Transistor Random Access Memory
File Size	178.45K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HM4-65262B_883 HM1-65262_883 HM4-65262_883 HM-65262_883 HM-65262883 HM-65262/883 HM1-65262/883 HM4-65262/883 HM4-65262B/883
OCR Text	... . . . . . . . . . . . . . . 70/85ns Max * Low Standby Current. . . . . . . . . . . . . . . . . . . . 50A Max * Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max * Data Retention at 2.0V . . . . . . . . . . . . . . . . . . . ...
Description	16K x 1 Asynchronous CMOS Static RAM
File Size	117.23K / 10 Page	View it Online	Download Datasheet

				Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
Part No.	BS616UV4016EIP85 BS616UV4016 BS616UV4016AC BS616UV4016AC-10 BS616UV4016AC-85 BS616UV4016ACG10 BS616UV4016ACG85 BS616UV4016ACP10 BS616UV4016ACP85 BS616UV4016AI BS616UV4016AI-10 BS616UV4016AI-85 BS616UV4016AIG10 BS616UV4016AIG85 BS616UV4016AIP10 BS616UV4016AIP85 BS616UV4016DC BS616UV4016DC-10 BS616UV4016DC-85 BS616UV4016DCG10 BS616UV4016DCG85 BS616UV4016DCP10 BS616UV4016DCP85 BS616UV4016DI BS616UV4016DI-10 BS616UV4016DI-85 BS616UV4016DIG10 BS616UV4016DIG85 BS616UV4016DIP10 BS616UV4016DIP85 BS616UV4016EC BS616UV4016EC-10 BS616UV4016ECG10 BS616UV4016ECG85 BS616UV4016ECP10 BS616UV4016ECP85 BS616UV4016EI BS616UV4016EI-10 BS616UV4016EI-85 BS616UV4016EIG10 BS616UV4016EIG85 BS616UV4016EIP10 BS616UV4016EC-85
OCR Text	... Y High speed access time : -85 85ns (Max.) -10 100ns (Max.) Y Automatic power down when chip is deselected Y Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin. Three state outputs and TTL compati...
Description	Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No Circular Connector; No. of Contacts:55; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-55 RoHS Compliant: No Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit 超低功高速CMOS SRAM56 × 16
File Size	148.92K / 10 Page	View it Online	Download Datasheet

				BSI
Part No.	BS62UV1027SIG10
OCR Text	... * High speed access time : -85 85ns (Max.) -10 100ns (Max.) * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation DESCRIPTION The BS62UV1027 is a high performance, ultra low po...
Description	Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
File Size	436.11K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008T2D-TQ85 K6X1008T2D-B K6X1008T2D-BB551 K6X1008T2D-BB70 K6X1008T2D-BB85 K6X1008T2D-BF55 K6X1008T2D-BF70 K6X1008T2D-BF85 K6X1008T2D-F K6X1008T2D-GB55 K6X1008T2D-GB70 K6X1008T2D-GB85 K6X1008T2D-GF55 K6X1008T2D-GF85 K6X1008T2D-GQ70 K6X1008T2D-GQ85 K6X1008T2D-PB55 K6X1008T2D-PB70 K6X1008T2D-PB85 K6X1008T2D-PF55 K6X1008T2D-PF70 K6X1008T2D-PF85 K6X1008T2D-Q K6X1008T2D-TB55 K6X1008T2D-TB70 K6X1008T2D-TB85 K6X1008T2D-TF55 K6X1008T2D-TF70 K6X1008T2D-TQ70
OCR Text	..., Max) (ICC2, Max) 6A 20mA 702)/85ns 10A PKG Type K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q Commercial(0~70C) 551)/702)/85ns Industrial(-40~85C) Automotive(-40~125C) 2.7~3.6V 32-SOP-525 32-TSOP1-0820F 32-SOP-525 32-TSOP1-0820F 1. T...
Description	128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM SPST to 4PST Slide DIP Switches
File Size	151.79K / 9 Page	View it Online	Download Datasheet

For 8.5ns Found Datasheets File :: 495 Search Time::0.859ms
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