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  8.5ns Datasheet PDF File

For 8.5ns Found Datasheets File :: 529    Search Time::2.875ms    
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    Naina Semiconductor
Part No. 85NS
OCR Text ... 20 200 40 400 60 600 85ns(r) 80 800 100 1000 120 1200 140 1400 160 1600 emiconductor ltd. 85 rd recovery diodes (stud and lead type ) do- 203ab (do c, unless otherwise noted) values units = 85 a...
Description Standard Recovery Diodes

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    85NS

Naina Semiconductor ltd.
Part No. 85NS
OCR Text ... 20 200 40 400 60 600 85ns(r) 80 800 100 1000 120 1200 140 1400 160 1600 emiconductor ltd. 85 rd recovery diodes (stud and lead type ) do- 203ab (do c, unless otherwise noted) values units = 85 a...
Description Standard Recovery Diodes (Stud and Lead Type)

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    85NS 85NSR

Naina Semiconductor ltd.
Part No. 85NS 85NSR
OCR Text
Description SILICON POWER DIODE

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    29103BRA 29109BRA 8413203RA 8413203YA HM-65262 8413201YA 8413201RA FN3002 HM1-65262B-9 HM1-65262-9

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. 29103BRA 29109BRA 8413203RA 8413203YA HM-65262 8413201YA 8413201RA FN3002 HM1-65262B-9 HM1-65262-9
OCR Text ... . . . . . . . . . . . . . . 70/85ns Max * Low Standby Current. . . . . . . . . . . . . . . . . . . .50A Max * Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max * Data Retention at 2.0V . . . . . . . . . . . . . . . . . . .20...
Description 16K x 1 Asynchronous CMOS Static RAM 16K X 1 STANDARD SRAM, 85 ns, CQCC20
From old datasheet system

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    K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB55 K6X4008T1F-GB70 K6X4008T1F-GB85 K6X4008T1F-GF55 K6X4008T1F-GF70 K6X

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB55 K6X4008T1F-GB70 K6X4008T1F-GB85 K6X4008T1F-GF55 K6X4008T1F-GF70 K6X4008T1F-GF85 K6X4008T1F-GQ70 K6X4008T1F-GQ85 K6X4008T1F-MB55 K6X4008T1F-MB70 K6X4008T1F-MB85 K6X4008T1F-MF55 K6X4008T1F-MF70 K6X4008T1F-MF85 K6X4008T1F-Q K6X4008T1F-VB55 K6X4008T1F-VB70 K6X4008T1F-VB85 K6X4008T1F-VF55 K6X4008T1F-VF70 K6X4008T1F-VF85 K6X4008T1F-VQ70 K6X4008T1F-VQ85 K6X4008T1F-YB55 K6X4008T1F-YB70 K6X4008T1F-YB85 K6X4008T1F-YF55 K6X4008T1F-YF70 K6X4008T1F-YF85 K6X4008T1F-YQ70 K6X4008T1F-YQ85
OCR Text ...F-Q Commercial(0~70C) 551)/702)/85ns Industrial(-40~85C) Automotive(-40~125C) 2.7~3.6V 702)/85ns 10A 20A 25mA 32-SOP-525, 32-TSOP1-0813.4F 32-TSOP2-400F Vcc Range Power Dissipation Speed Standby Operating (ISB1, Max) (ICC2, Max) 10A ...
Description Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5A 512Kx8位低功耗和低电压的CMOS静态RAM
PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RAM
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
D38999/26WA98SN

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    AMI[AMI SEMICONDUCTOR]
Part No. N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q1618C2BX-15C N04Q1618C2BX-70C
OCR Text ...3.0 Speed (nS) 150ns 150ns 70ns 85ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 0oC to +70oC 1. Part numbers are under development. Please contact your local sales representati...
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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    K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008U1C-YB70 K6T4008U1C-YF10 K6T4008V1C-VF70 K6T4008V1C-GF70 K6T4008V1C-YF

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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Nihon Dempa Kogyo Co., Ltd.
Samsung Semiconductor Co., Ltd.
Part No. K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008U1C-YB70 K6T4008U1C-YF10 K6T4008V1C-VF70 K6T4008V1C-GF70 K6T4008V1C-YF70 K6T4008U1C-VB70 K6T4008V1C-MF70 K6T4008V1C-YB70 K6T4008V1C-YF85 K6T4008U1C-B K6T4008U1C-F K6T4008U1C-GB10 K6T4008U1C-GB70 K6T4008U1C-GB85 K6T4008U1C-GF10 K6T4008U1C-GF70 K6T4008U1C-GF85 K6T4008U1C-MB10 K6T4008U1C-MB70 K6T4008U1C-MB85 K6T4008U1C-MF70 K6T4008U1C-MF85 K6T4008U1C-TB10 K6T4008U1C-TB70 K6T4008U1C-TB85 K6T4008U1C-TF10 K6T4008U1C-TF70 K6T4008U1C-TF85 K6T4008U1C-VB10 K6T4008U1C-VB85 K6T4008U1C-VF70 K6T4008U1C-VF85 K6T4008U1C-YB10 K6T4008U1C-YB85 K6T4008U1C-YF70 K6T4008U1C-YF85 K6T4008V1C-B K6T4008V1C-F K6T4008V1C-GB70 K6T4008V1C-GB85 K6T4008V1C-GF85 K6T4008V1C-MB70 K6T4008V1C-MB85 K6T4008V1C-MF85 K6T4008V1C-TB70 K6T4008V1C-TB85 K6T4008V1C-TF70 K6T4008V1C-TF85 K6T4008V1C-VB70 K6T4008V1C-VB85 K6T4008V1C-VF85 K6T4008V1C-YB85
OCR Text ...3.0~3.6V 2.7~3.3V Speed 701)/85ns 701)/85/100ns 701)/85ns 701)/85/100ns Standby (ISB1, Max) 15A Operating (ICC2, Max) PKG Type Commercial(0~70C) 30mA 20A 32-SOP 32-TSOP2-F/R 32-TSOP1-F 32-sTSOP1-F PIN DESCRIPTION A1...
Description POT 250K OHM 3/8 SQ CERM SL ST
POT 25K OHM 3/8 SQ CERM SL ST
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM

File Size 185.50K  /  10 Page

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    MCNIX[Macronix International]
Part No. MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX69F1602C3BXBI-90 MX69F1602C3T MX69F1602C3TB MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 MX69F1602C4T MX69F1602C4TB MX69F1604C3BXBI-70 MX69F1604C3BXBI-90 MX69F1604C3TXBI-70
OCR Text ...h memory:70/90ns SRAM memory:70/85ns * Operation temperature range: -40 ~ 85 C - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report Automatic sector erase, word write and sector lo...
Description 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY

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    BS616UV2019TIP10 BS616UV2019TI85 BS616UV2019TCP85 BS616UV2019DIG10 BS616UV2019TCP10 BS616UV2019TI10 BS616UV2019TIG10 BS6

Brilliance Semiconductor
Brilliance Semiconducto...
Part No. BS616UV2019TIP10 BS616UV2019TI85 BS616UV2019TCP85 BS616UV2019DIG10 BS616UV2019TCP10 BS616UV2019TI10 BS616UV2019TIG10 BS616UV2019DIP10 BS616UV2019DCP10 BS616UV2019AI10 BS616UV2019ACG10 BS616UV2019AIG10 BS616UV2019DIP85 BS616UV2019DI85 BS616UV2019TIP85 BS616UV2019TC10 BS616UV2019TC85 BS616UV2019AI85 BS616UV201906 BS616UV2019AIP10 BS616UV2019ACP85 BS616UV2019DI10 BS616UV2019DIG85 BS616UV2019TIG85 BS616UV2019AIP85 BS616UV2019DCP85
OCR Text ...ration current : 10mA (Max.) at 85ns 1mA (Max.) at 1MHz Standby current : 0.2uA (Typ.) at 25 OC VCC = 3.0V Operation current : 13mA (Max.) at 85ns 2mA (Max.) at 1MHz Standby current : 0.3uA (Typ.) at 25 OC Y High speed access time : -85 85n...
Description Ultra Low Power CMOS SRAM 128K X 16 bit

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    M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP D98015_A M5M5V408BFP-85H M5M5V408BTP-85LW M5M5V408BFP-10H M5

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP D98015_A M5M5V408BFP-85H M5M5V408BTP-85LW M5M5V408BFP-10H M5M5V408BFP-10HI M5M5V408BFP-10HW M5M5V408BFP-10L M5M5V408BFP-10LI M5M5V408BFP-10LW M5M5V408BFP-85HI M5M5V408BFP-85HW M5M5V408BFP-85L M5M5V408BFP-85LI M5M5V408BFP-85LW M5M5V408BKR-10H M5M5V408BKR-10HI M5M5V408BKR-10HW M5M5V408BKR-10L M5M5V408BKR-10LI M5M5V408BKR-10LW M5M5V408BKR-85H M5M5V408BKR-85HI M5M5V408BKR-85HW M5M5V408BKR-85L M5M5V408BKR-85LI M5M5V408BKR-85LW M5M5V408BKV-10H M5M5V408BKV-10HI M5M5V408BKV-10HW M5M5V408BKV-10L M5M5V408BKV-10LI M5M5V408BKV-10LW M5M5V408BKV-85H M5M5V408BKV-85HI M5M5V408BKV-85HW M5M5V408BKV-85L M5M5V408BKV-85LI M5M5V408BKV-85LW M5M5V408BRT-10H M5M5V408BRT-10HI M5M5V408BRT-10HW M5M5V408BRT-10LI M5M5V408BRT-10LW M5M5V408BRT-85H M5M5V408BRT-85HI M5M5V408BRT-85HW M5M5V408BRT-85L M5M5V408BRT-85LI M5M5V408BRT-85LW M5M5V408BTP-10H M5M5V408BTP-10HI M5M5V408BTP-10HW M5M5V408BTP-10L M5M5V408BTP-10LI M5M5V408BTP-10LW M5M5V408BTP-85H M5M5V408BTP-85HI M5M5V408BTP-85HW M5M5V408BTP-85L M5M5V408BTP-85LI M5M5V408BRT-10L
OCR Text ...-1A --3A 20A 10A ----- max. 85ns 100ns 85ns 100ns 85ns 100ns 85ns 100ns 85ns 100ns 85ns 100ns Active current Icc1 (3.0V, typ.) Standard 0 ~ +70C 0.3A 1A W-version -20 ~ +85C M5M5V408B## -10LW M5M5V408B## -85HW M5M5V408B##...
Description From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

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