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  8.5ns Datasheet PDF File

For 8.5ns Found Datasheets File :: 495    Search Time::1.875ms    
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Part No. K6F2016S4D-FF850
OCR Text ...rial(-40~85 c) 2.3~2.7v 70 1) /85ns 0.5 m a 3ma 48-fbga-6.00x7.00 128k x 16 bit super low power and low voltage full cmos static ram general description the k6f2016s4d families are fabricated by samsung s advanced full cmos process techn...
Description 128K X 16 STANDARD SRAM, 85 ns, PBGA48

File Size 160.81K  /  9 Page

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    HN58C256AI HN85C256ATI85E HN85C256ATI10E HN85C256AFPI10E HN85C256AFPI10EZ HN85C256AFPI85E HN85C256AFPI85EZ HN85C256API10

Renesas Electronics Corporation
Part No. HN58C256AI HN85C256ATI85E HN85C256ATI10E HN85C256AFPI10E HN85C256AFPI10EZ HN85C256AFPI85E HN85C256AFPI85EZ HN85C256API10E HN85C256API85E
OCR Text ...tainer quantity hn85c256api85e 85ns 600mil 28-pin plastic dip prdp0028ab-a (dp-28v) tube max. 13 pcs/tube max. 325 pcs/inner box hn85c256api10e 100ns hn85c256afpi85e 85ns 400mil 28-pin plastic sop prsp0028dc-a (fp-28dv) tube max...
Description 256k EEPROM (32-kword × 8-bit)

File Size 1,057.15K  /  18 Page

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Part No. K6F1016S4B-FF85 K6F1016S4B-FF70 K6F1016S4B-FF850
OCR Text ...rial(-40~85 c) 2.3~2.7v 70 1) /85ns 0.5 m a 3ma 48-fbga-6.00x7.00 64k x 16 bit super low power and low voltage full cmos static ram general description the k6f1016s4b families are fabricated by samsung s advanced full cmos process techno...
Description 64K X 16 STANDARD SRAM, 85 ns, PBGA48
64K X 16 STANDARD SRAM, 70 ns, PBGA48

File Size 160.66K  /  9 Page

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Part No. K6T0808U1D-TD85 K6T0808U1D-GB85 K6T0808U1D-GB850 K6T0808V1D-RD70
OCR Text ...3v 28-sop, 70ns, 3.0v 28-sop, 85ns, 3.0v 28-sop, 100ns, 3.0v 28-tsop-f, 70ns, 3.0v 28-tsop-f, 85ns, 3.0v 28-tsop-f, 100ns, 3.0v 28-tsop-r, 70ns, 3.0v 28-tsop-r, 85ns, 3.0v 28-tsop-r, 100ns, 3.0v k6t0808v1d-gd70 k6t0808v1d-td70 ...
Description 32K X 8 STANDARD SRAM, 85 ns, PDSO28
32K X 8 STANDARD SRAM, 70 ns, PDSO28

File Size 153.67K  /  9 Page

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    K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB10 K6T4016U3C-RB70 K6T4016U3C-RB85 K6T4016U3C-RF10 K6T4016U3C-RF70 K6T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB10 K6T4016U3C-RB70 K6T4016U3C-RB85 K6T4016U3C-RF10 K6T4016U3C-RF70 K6T4016U3C-RF85 K6T4016U3C-TB10 K6T4016U3C-TB70 K6T4016U3C-TB85 K6T4016U3C-TF10 K6T4016U3C-TF70 K6T4016U3C-TF85 K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-RB10 K6T4016V3C-RB70 K6T4016V3C-RB85 K6T4016V3C-RF10 K6T4016V3C-RF70 K6T4016V3C-RF85 K6T4016V3C-TB10 K6T4016V3C-TB55 K6T4016V3C-TB70 K6T4016V3C-TB85 K6T4016V3C-TF10 K6T4016V3C-TF70 K6T4016V3C-TF85
OCR Text ...Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: 5mA at read/write to 4mA at read ICC1: 5mA to 6mA ICC2: 50mA to 45mA ISB: 0.5mA to 0.3mA ISB1: 10A to 15A for commercia...
Description    256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM

File Size 154.01K  /  9 Page

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