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  8.5ns Datasheet PDF File

For 8.5ns Found Datasheets File :: 495    Search Time::1.469ms    
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    BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV2019AC-10 BS616UV2019AC-85 BS616UV2019ACG10 BS616UV2019ACG85 BS616UV2019ACP10 BS616UV2019ACP85 BS616UV2019AI BS616UV2019AI-10 BS616UV2019AI-85 BS616UV2019AIG10 BS616UV2019AIG85 BS616UV2019AIP10 BS616UV2019AIP85 BS616UV2019DC BS616UV2019DC-10 BS616UV2019DC-85 BS616UV2019DCG10 BS616UV2019DCG85 BS616UV2019DCP10 BS616UV2019DCP85 BS616UV2019DI BS616UV2019DI-10 BS616UV2019DI-85 BS616UV2019DIG10 BS616UV2019DIG85 BS616UV2019DIP10 BS616UV2019DIP85 BS616UV2019TC BS616UV2019TC-10 BS616UV2019TC-85 BS616UV2019TCG10 BS616UV2019TCG85 BS616UV2019TCP10 BS616UV2019TCP85 BS616UV2019TI BS616UV2019TI-10 BS616UV2019TI-85 BS616UV2019TIG10 BS616UV2019TIG85 BS616UV2019TIP10
OCR Text ... * High speed access time : -85 85ns (Max.) -10 100ns (Max.) * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Easy expansion with CE and OE options * I/O Configuration x8/...
Description Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16
020419-0023 超低功率/电压CMOS SRAM28K的16
Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85
JT 55C 55#20 SKT PLUG
Asynchronous 2M(128Kx16) bits Static RAM

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    Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
http://
Part No. BS62UV1027 BS62UV1027SIP10 BS62UV1027TCP10 BS62UV1027STC-10 BS62UV1027TIP85 BS62UV1027DC BS62UV1027DC-10 BS62UV1027DC-85 BS62UV1027DCG10 BS62UV1027DCG85 BS62UV1027DCP10 BS62UV1027DCP85 BS62UV1027DI BS62UV1027DI-10 BS62UV1027DI-85 BS62UV1027DIG10 BS62UV1027DIG85 BS62UV1027DIP10 BS62UV1027DIP85 BS62UV1027JC BS62UV1027JC-10 BS62UV1027JC-85 BS62UV1027JCG10 BS62UV1027JCG85 BS62UV1027JCP10 BS62UV1027JCP85 BS62UV1027JI BS62UV1027JI-10 BS62UV1027JI-85 BS62UV1027JIG10 BS62UV1027JIG85 BS62UV1027JIP10 BS62UV1027JIP85 BS62UV1027PC BS62UV1027PC-10 BS62UV1027PC-85 BS62UV1027PCG10 BS62UV1027PCG85 BS62UV1027PCP10 BS62UV1027PCP85 BS62UV1027PI BS62UV1027PI-10 BS62UV1027PI-85 BS62UV1027PIG10 BS62UV1027PIG85 BS62UV1027PIP10 BS62UV1027PIP85 BS62UV1027SC BS62UV1027SC-10 BS62UV1027SC-85 BS62UV1027SCG10 BS62UV1027SCG85 BS62UV1027SCP10 BS62UV1027SCP85 BS62UV1027SI BS62UV1027SI-10 BS62UV1027SI-85 BS62UV1027SIG10 BS62UV1027SIG85 BS62UV1027SIP85 BS62UV1027STC BS62UV1027STC-85 BS62UV1027STCG10 BS62UV1027STCG85 BS62UV1027STCP10 BS62UV1027STCP85 BS62UV1027STI BS62UV1027STI-10 BS62UV1027STI-85 BS62UV1027STIG10 BS62UV1027STIG85 BS62UV1027STIP10 BS62UV1027STIP85 BS62UV1027TC BS62UV1027TC-10 BS62UV1027TC-85 BS62UV10
OCR Text ... * High speed access time : -85 85ns (Max.) -10 100ns (Max.) * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation DESCRIPTION The BS62UV1027 is a high performance, ultra low po...
Description Asynchronous 1M(128Kx8) bits Static RAM
3.3V PLL Clock Driver with LVPECL Input and 12 LVTTL Outputs 52-TQFP 超低功率/电压CMOS SRAM28K的8
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit 超低功率/电压CMOS SRAM28K的8
From old datasheet system

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    Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M5V416BTP M5M5V416BTP-70H M5M5V416BTP-85LW M5M5V416BRT M5M5V416BRT-10H M5M5V416BRT-10HI M5M5V416BRT-10HW M5M5V416BRT-10L M5M5V416BRT-10LI M5M5V416BRT-10LW M5M5V416BRT-70H M5M5V416BRT-70HI M5M5V416BRT-70HW M5M5V416BRT-70L M5M5V416BRT-70LI M5M5V416BRT-70LW M5M5V416BRT-85H M5M5V416BRT-85HI M5M5V416BRT-85HW M5M5V416BRT-85L M5M5V416BRT-85LI M5M5V416BRT-85LW M5M5V416BTP-10H M5M5V416BTP-10HI M5M5V416BTP-10HW M5M5V416BTP-10L M5M5V416BTP-10LI M5M5V416BTP-10LW M5M5V416BTP-70HI M5M5V416BTP-70HW M5M5V416BTP-70L M5M5V416BTP-70LI M5M5V416BTP-70LW M5M5V416BTP-85H M5M5V416BTP-85HI M5M5V416BTP-85HW M5M5V416BTP-85L M5M5V416BTP-85LI
OCR Text ...l * 25C --40C --- max. 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns Ratings (max.) 25C 40C 70C ----20A Standard 0 ~ +70C M5M5V416BTP , RT -10L M5M5V416BTP , RT -70H M5M5V416BT...
Description ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% 4194304位(262144字由16位)的CMOS静RAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85

File Size 108.44K  /  11 Page

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    K1S1616BCA

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S1616BCA
OCR Text ... Temp. Vcc Range Speed (tRC) 70/85ns Power Dissipation Standby (ISB1, Max.) 80A Operating (ICC2, Max.) 30mA PKG Type K1S1616BCA-I Industrial(-40~85C) 1.7~2.1V 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK...
Description 1Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 185.48K  /  10 Page

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    http://
Part No. EDI88130CXCC EDI88130CXCI EDI88130CXCM EDI88130CXCB
OCR Text ...l , i i/o = 0ma, min cycle (70-85ns) 120 ma cs2# = v ih (100ns) 110 ma standby (ttl) power supply current i cc2 cs1# v ih and/or cs2# v il , v in v ih or v il 10ma full standby power supply current i cc3 cs1# v cc -0.2v and/or c...
Description 128Kx8 MONOLITHIC SRAM, SMD 5962-89598

File Size 384.74K  /  8 Page

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    Mitsubishi Electric Corporation
Part No. M5M5V408BTP-10LI
OCR Text ...-by current icc (pd) , vcc=3.0v 85ns 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v 2.7 ~ 3.6v --- --- --- 0.3? 0.3? 0.3? --- 1? 1? 3? 1? 3? typical * --- --- --- 40? 1? 1? 1? --- --- 20? 10? 20? 10? 40? 20? 20? 10? 40? 20? 70? 85? ...
Description 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

File Size 92.20K  /  14 Page

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    MXIC
MCNIX[Macronix International]
Part No. MX69F162 MX69F164C3BTXBI-90 MX69F162C3BB MX69F162C3BBXBI-70 MX69F162C3BBXBI-90 MX69F162C3BT MX69F162C3BTXBI-70 MX69F162C3BTXBI-90 MX69F164 MX69F164C3BB MX69F164C3BBXBI-70 MX69F164C3BBXBI-90 MX69F164C3BT MX69F164C3BTXBI-70
OCR Text ...h memory:70/90ns SRAM memory:70/85ns * Operation temperature range: -40 ~ 85 C * Fully compatible with MX69F1602/1604C3T/B device - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register repo...
Description 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY

File Size 296.79K  /  51 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM616U4000C
OCR Text ...d bin change commercial : 70/85ns ? 70/85/100ns industrial : 85/100ns ? 70/85/100ns - dc characteristics change i cc : 5ma at read/write ? 4ma at read i cc1 : 5ma ? 6ma i cc2 : 50ma ? 45ma i sb : 0.5ma ? 0...
Description 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)

File Size 140.45K  /  9 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM616U4000B
OCR Text ...2-f, 70ns, 3.3v,ll 44-tsop2-f, 85ns, 3.3v,ll 44-tsop2-r, 70ns, 3.3v,ll 44-tsop2-r, 85ns, 3.3v,ll 44-tsop2-f, 85ns, 3.0v,ll 44-tsop2-f, 100ns, 3.0v,ll 44-tsop2-r, 85ns, 3.0v,ll 44-tsop2-r, 100ns, 3.0v,ll km616v4000blti-8l km616v4000bl...
Description 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)

File Size 133.48K  /  9 Page

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    Samsung Electronic
Part No. K6F8016R6BFAMILY
OCR Text ...ial(-40~85 c) 1.65~2.2v 70 1) /85ns 0.5 m a 2) 2ma 48-tbga-6.00x7.00 samsung electronics co., ltd. reserves the right to change products and specifications without notice. functional block diagram clk gen. row select i/o 1 ~i/o 8 data con...
Description 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet

File Size 155.79K  /  9 Page

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For 8.5ns Found Datasheets File :: 495    Search Time::1.469ms    
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