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  8.5ns Datasheet PDF File

For 8.5ns Found Datasheets File :: 495    Search Time::0.906ms    
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    MCNIX[Macronix International]
Part No. MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX69F1602C3BXBI-90 MX69F1602C3T MX69F1602C3TB MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 MX69F1602C4T MX69F1602C4TB MX69F1604C3BXBI-70 MX69F1604C3BXBI-90 MX69F1604C3TXBI-70
OCR Text ...h memory:70/90ns SRAM memory:70/85ns * Operation temperature range: -40 ~ 85 C - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report Automatic sector erase, word write and sector lo...
Description 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY

File Size 461.32K  /  51 Page

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    MT28C3224P20 MT28C3224P18

MICRON[Micron Technology]
Part No. MT28C3224P20 MT28C3224P18
OCR Text ...@ 1.80V F_VCC SRAM access time: 85ns @ 1.80V S_VCC * Page Mode read access Interpage read access: 80ns @ 1.80V F_VCC Intrapage read access: 30ns @ 1.80V F_VCC * Low power consumption * Enhanced suspend options ERASE-SUSPEND-to-READ within s...
Description FLASH AND SRAM COMBO MEMORY

File Size 472.98K  /  42 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
Part No. M5M5W816WG-85LI M5M5W816WG-10H M5M5W816WG-10HI M5M5W816WG-10L M5M5W816WG-10LI M5M5W816WG-85H M5M5W816WG-85HI M5M5W816WG-85L M5M5V816WG-10H M5M5V816WG-10LI M5M5V816WG-85H
OCR Text ... ~ 2.7V Access time max. 85ns 100ns 85ns 100ns 85ns 100ns 85ns 100ns Stand-by current (Vcc=2.7V) Ratings (max.) * Typical 25C 40C 25C 40C 70C 85C 0.1 0.1 0.1 0.1 0.2 0.2 0.2 0.2 --1 --1 --2 --2 16 8 16 8 ----30 15 Active curren...
Description 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

File Size 85.72K  /  8 Page

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    K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F4016R4E K6F4016R4EFAMILY

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F4016R4E K6F4016R4EFAMILY
OCR Text ...l(-40~85C) 1.65~2.2V 701)/85ns 48-TBGA-6.00x7.00 1. The parameter is measured with 30pF test load. 2. Typical value are measured at VCC=2.0V, TA=25C and not 100% tested. PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRA...
Description 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet

File Size 117.71K  /  9 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
http://
Part No. M5M5V416WG-70LI M5M5V416BWG M5M5V416BWG-10H M5M5V416BWG-10HI M5M5V416BWG-10HW M5M5V416BWG-10L M5M5V416BWG-10LI M5M5V416BWG-10LW M5M5V416BWG-70H M5M5V416BWG-70HI M5M5V416BWG-70HW M5M5V416BWG-70L M5M5V416BWG-70LW M5M5V416BWG-85H M5M5V416BWG-85HI M5M5V416BWG-85HW M5M5V416BWG-85L M5M5V416BWG-85LI M5M5V416BWG-85LW M5M5V416BWG-70LI
OCR Text ...l * 25C --40C --- max. 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns 70ns 85ns 100ns Standard 0 ~ +70C M5M5V416BWG -10L M5M5V416BWG -70H M5M5V416BWG -85H M5M5V416BWG -10H M5M5V416BWG -70LW M5M5V4...
Description 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM

File Size 104.93K  /  10 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4016T3F K6X4016T3F-TQ85 K6X4016T3F-B K6X4016T3F-F K6X4016T3F-Q K6X4016T3F-TB55 K6X4016T3F-TB70 K6X4016T3F-TB85 K6X4016T3F-TF55 K6X4016T3F-TF70 K6X4016T3F-TF85 K6X4016T3F-TQ70
OCR Text ...tandby (ISB1, Max) 10A 10A 702)/85ns 20A 25mA 44-TSOP2-400F Operating (ICC2, Max) PKG Type 551)/702)/85ns 1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V). 2. The parameter is measured with 30pF test load. PIN DESCR...
Description 256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM

File Size 136.97K  /  9 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KAB04D100M-TNGP KAB01D100M KAB01D100M-TLGP KAB01D100M-TNGP KAB02D100M-TLGP KAB02D100M-TNGP KAB03D100M-TLGP KAB03D100M-TNGP KAB04D100M-TLGP
OCR Text ..., Serial : 50ns(Min.) - UtRAM : 85ns * Power Consumption (typical value) - NOR Flash Read Current : 14mA (@5MHz) Program/Erase Current : 15mA Read while Program or Read while Erase : 35mA Standby Mode/Autosleep Mode : 10A - NAND Flash Read ...
Description Multi-Chip Package MEMORY

File Size 1,371.88K  /  72 Page

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    K1S3216BCD

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216BCD
OCR Text ... Temp. Vcc Range Speed (tRC) 70/85ns Power Dissipation Standby (ISB1, Max.) 100A Operating (ICC2, Max.) 35mA PKG Type K1S3216BCD-I Industrial(-40~85C) 1.7~2.0V 48-FBGA-6.00x8.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOC...
Description 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 164.93K  /  10 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G-FF70 K6F2016R4G-FF85 K6F2016R4G-XF70
OCR Text ...(-40~85C) 1.65~1.95V 701)/85ns 48-FBGA-6.00x7.00 1. The parameter is measured with 30pF test load. 2. Typical values are measured at VCC=1.8V, TA=25C and not 100% tested. PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGR...
Description 2Mb(128K x 16 bit) Low Power SRAM

File Size 157.29K  /  10 Page

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    KM62U256DL-L KM62U256DLG-10L KM62U256DLG-7L KM62U256DLGE-7L KM62U256DLGI-10L KM62U256DLI-L KM62U256DLRG-10L KM62U256DLRG

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KM62U256DL-L KM62U256DLG-10L KM62U256DLG-7L KM62U256DLGE-7L KM62U256DLGI-10L KM62U256DLI-L KM62U256DLRG-10L KM62U256DLRG-7L KM62U256DLRG-8L KM62U256DLRGE-10L KM62U256DLRGI-10L KM62U256DLRGI-8L KM62U256DLTG-7L KM62U256DLTGE-10L KM62U256DLTGE-8L KM62U256DLTGI-10L KM62U256DLTGI-8L KM62V256D KM62V256DL-L KM62V256DLE-L KM62V256DLG-7L KM62V256DLGE-7L KM62V256DLGI-7L KM62V256DLI-L KM62V256DLRG-10L KM62V256DLRG-7L KM62V256DLRGE-10L KM62V256DLRGE-7L KM62V256DLRGI-10L KM62V256DLRGI-7L KM62V256DLTG-10L KM62V256DLTG-7L KM62V256DLTGE-10L KM62V256DLTGE-7L KM62V256DLTGI-10L KM62V256DLTGI-7L KM62U256DLTGI-7L KM62U256D KM62U256DLE-L KM62U256DLG-8L KM62U256DLGE-10L KM62U256DLGE-8L KM62U256DLGI-7L KM62U256DLGI-8L KM62U256DLRGE-7L KM62U256DLRGE-8L KM62U256DLRGI-7L KM62U256DLTG-10L KM62U256DLTG-8L KM62U256DLTGE-7L
OCR Text ...G-8L 28-SOP, 70ns, 3.0V 28-SOP, 85ns, 3.0V 28-SOP, 100ns, 3.0V 28-TSOP F, 70ns, 3.0V 28-TSOP F, 85ns, 3.0V KM62U256DLGE-7L KM62U256DLGE-8L KM62U256DLGE-10L KM62U256DLTGE-7L KM62U256DLTGE-8L KM62U256DLRGE-7L 28-SOP, 70ns, 3.0V 28-SOP, 85ns, ...
Description 32KX8 BIT LOW POWER AND LOW VOLTAGE CMOS STATIC RAM

File Size 158.36K  /  9 Page

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For 8.5ns Found Datasheets File :: 495    Search Time::0.906ms    
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