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    Alpha & Omega Semiconductor
Part No. AON6234
OCR Text ... r g tested symbol v ds drain-source voltage 40 the aon6234 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low...
Description Single MV MOSFETs (40V - 400V)

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    Alpha & Omega Semiconductor
Part No. AON6144
OCR Text ... c =100c 10s p d 40 48 78 gate-source voltage pulsed drain current c 89 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.3 50 1.6 va absolute maximum ratings t...
Description Single MV MOSFETs (40V - 400V)

File Size 319.72K  /  6 Page

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    AD721 AD721JP AD720JP AD720

AD[Analog Devices]
Part No. AD721 AD721JP AD720JP AD720
OCR Text ...vide best scaling accuracy when source resistance is 37.5 (75 reverse-terminated input). 2 Required for driving a 75 double reverse terminated load. 3 All outputs are measured at a reverse-terminated load; voltages at IC pins are twice t...
Description RGB to NTSC/PAL Encoders

File Size 131.76K  /  8 Page

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    IXFR140N20P

IXYS Corporation
Part No. IXFR140N20P
OCR Text ...200 ns g = gate d = drain s = source (isolated tab) g d s isoplus247 (ixfr) e153432 (electrically isolated back surface) ixys reserves the right to change limits, test conditions, and dimensions. ixfr 140n20p symbol test...
Description PolarHT HiPerFET Power MOSFET ISOPLUS247

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    TOSHIBA
Part No. TK3A65DA
OCR Text ... applications ? low drain-source on-resistance: r ds (on) = 2.3 (typ.) ? high forward transfer admittance: |y fs | = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 650 v) ? enhancement mode: v th = 2.4 to ...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 201.17K  /  6 Page

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    IRHMB57Z60

International Rectifier
Part No. IRHMB57Z60
OCR Text ...ng factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 1250 mj i ar avalanche current 45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak diode recovery dv/dt 1.08 v/ns t j operating junction...
Description 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 169.98K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AOTF288L
OCR Text ... aot288l/aob288l aotf288l drain-source voltage 80 the aot288l & aob288l & aotf288l uses trench mosfet technology that is uniquely optimized to provi de the most efficient high frequency switching perform ance. both conduction and switching ...
Description Single MV MOSFETs (40V - 400V)

File Size 376.85K  /  7 Page

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    NLSX3378

ON Semiconductor
Part No. NLSX3378
OCR Text ... output high voltage i/o v cc source current = 20 a 2/3 * v cc ? ? v v olc i/o v cc output low voltage i/o v cc sink current = 20 a ? ? 1/3 * v cc v v ohl i/o v l output high voltage i/o v l source current = 20 a 2/3 * v l ...
Description 4-Bit 20 Mb/s Dual-Supply Level Translator

File Size 113.03K  /  9 Page

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    Panasonic
Part No. MTM232230LBF
OCR Text ...mos fet ? features ? low drain-source on-state resistance : rds(on) typ = 20 m ? (vgs = 4.0 v) for switching ? halogen-free / rohs compliant panasonic smini3-g1-b (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? marking symbol : 1.2....
Description Other MOSFETs

File Size 243.06K  /  7 Page

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