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    LMBT2222ADW1T1G

Leshan Radio Company
Part No. LMBT2222ADW1T1G
OCR Text ...IGURE (dB) RS = OPTIMUM RS = source RS = RESISTANCE 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, source RESISTANCE (OHMS) Figure 5. Frequency Effe...
Description Dual General Purpose Transistors

File Size 129.30K  /  6 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ...citance Cob (pF) 100 50 Singnal source resistance Rg (k) IE = 0 f = 1 MHz 100 30 10 3 1.0 0.3 0.1 0.03 10 0.01 -0.01 -0.03 -0.1 -0.3 -1.0 -3 -10 -30 -100 Collector Current IC (mA) NF = 0.5 dB 1 2 4 6 Contours of Constant Noise Figure (1) VC...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 40.84K  /  8 Page

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    TOSHIBA
Part No. TK10Q60W
OCR Text ...features features (1) low drain-source on-resistance: r ds(on) = 0.327 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to 3.7 v (v ds = 10 v, i d = 0.5 ma) 3. ...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 247.65K  /  10 Page

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    FreesCale
Part No. MC4807
OCR Text ...sed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-so...
Description Dual P-Channel 30-V (D-S) MOSFET

File Size 409.08K  /  5 Page

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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text ...ant Noise Figure (1) 100 Signal source Resistance Rg (k) 30 10 3 1.0 0.3 6 Collector Output Capacitance Cob (pF) 50 20 10 5 IE = 0 f = 1 MHz VCE = -6 V f = 10 Hz 2 1.0 0.5 -1 -3 -10 -30 -100 Collector to Base Voltage VCB ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 36.33K  /  7 Page

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    STT3810N

SeCoS Halbleitertechnologie GmbH
Part No. STT3810N
OCR Text ...eter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v t a = 25 c 6 continuous drain current 1 t a = 100 c i d 3.6 a pulsed drain current 2 i dm 20 a continuous source current (di...
Description N-Channel Enhancement Mode Mos.FET

File Size 453.37K  /  4 Page

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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2SD620 2SK620
OCR Text ... (Ta = 25C) Parameter Drain to source breakdown voltage Gate to source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150...
Description Silicon N-Channel MOS FET

File Size 35.23K  /  2 Page

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    PMXB56EN

NXP Semiconductors
Part No. PMXB56EN
OCR Text ...mal conduction ? very low drain-source on-state resistance r dson = 49 m? ? very fast switching 3. applications ? low-side load switch and charging switch for portable devices ? power management in battery-driven portables ? led driver ? d...
Description 30 V, N-channel Trench MOSFET

File Size 269.10K  /  15 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...otherwise specified Item Drain-source-Voltage Continous Drain Current Pulsed Drain Current Gate-source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol ...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    71061 SI4831DY

http://
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ...ERWISE NOTED) Parameter Drain-source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous source Current (MOSFET Diode ...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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