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    DMN21D2UFB DMN21D2UFB-7B

Diodes Incorporated
Part No. DMN21D2UFB DMN21D2UFB-7B
OCR Text ...top vie w bar denotes gate and source side dmn21d2ufb-7b esd protected d s g bottom view top view package pin configuration equivalent circuit x1-dfn1006-3 source body diode gate protection diode gate drain e4 dmn21d2ufb...
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 208.96K  /  6 Page

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    DS1742 DS1742-100 DS1742-70 DS1742W-120 DS1742W-150

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
Part No. DS1742 DS1742-100 DS1742-70 DS1742W-120 DS1742W-150
OCR Text ...trol circuit and lithium energy source Clock registers are accessed identical to the static RAM. These registers are resident in the eight top RAM locations Century byte register Totally nonvolatile with over 10 years of operation in the ab...
Description Y2KC Nonvolatile Timekeeping RAM

File Size 161.94K  /  12 Page

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    TOSHIBA
Part No. TPC8228-H
OCR Text ... = 2.6 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 38 m ? (typ.) (5) low leakage current: i dss = 10 a (max) (v ds = 60 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. packagin...
Description Power MOSFET (N-ch dual)

File Size 255.40K  /  9 Page

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    TOSHIBA
Part No. TK100A08N1
OCR Text ...features features (1) low drain-source on-resistance: r ds(on) = 2.6 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. ...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 234.38K  /  9 Page

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    SSM3K56MFV

Toshiba Semiconductor
Part No. SSM3K56MFV
OCR Text ...te drive voltage. (2) low drain-source on-resistance : r ds(on) = 235 m ? (max) (@v gs = 4.5 v) r ds(on) = 300 m ? (max) (@v gs = 2.5 v) r ds(on) = 480 m ? (max) (@v gs = 1.8 v) r ds(on) = 840 m ? (max) (@v gs = 1.5 v) 3. ...
Description    MOSFETs Silicon N-Channel MOS
Small-signal MOSFET

File Size 198.08K  /  8 Page

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    TOSHIBA
Part No. TPH7R506NH
OCR Text ...w = 14 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 6.1 m ? (typ.) (v gs = 10 v) (5) low leakage current: i dss = 10 a (max) (v ds = 60 v) (6) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.3 ma) 3. 3. ...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 235.24K  /  9 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... Symbol VDSS VGSS ID PD Drain-source Voltage Gate-source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 20 (Note 1a) Units V V A W 11.5 50 2.5 1.2 1 -55 to +150 Po...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    FS7KM-12

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-12
OCR Text ... 2000V q q GATE w DRAIN e source e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tst...
Description HIGH-SPEED SWITCHING USE

File Size 44.52K  /  4 Page

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    FS7KM-14A

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. FS7KM-14A
OCR Text ... 0.25 4.5 0.2 q GATE w DRAIN e source 123 2.6 0.2 w VDSS ................................................................................ 700V rDS (ON) (MAX) .............................................................. 1.82 ID ...
Description HIGH-SPEED SWITCHING USE
AML ROCKER OPERATOR COVER RED 高速开关使

File Size 43.32K  /  4 Page

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    FS7KM-16A FS7KM-16

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-16A FS7KM-16
OCR Text ... 2000V q q GATE w DRAIN e source e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tst...
Description HIGH-SPEED SWITCHING USE

File Size 42.60K  /  4 Page

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