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TDS5052B D2400 73E2R47F HE13009 CX28346 INTERSIL CS1109 MBRS1
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    TIM3742-30SL07

Toshiba Semiconductor
Part No. TIM3742-30SL07
OCR Text ...ge Saturated Drain Current Gate-source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -1.0 -5 TYP. 6300 -2.5 18 1.0 MAX. -4.0 1.3 CONDITIONS VDS= 3V IDS= 10A VDS= 3V IDS= 100mA VDS= 3V VGS= 0V I...
Description IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level

File Size 139.97K  /  4 Page

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    TIM3742-16UL

Toshiba Semiconductor
Part No. TIM3742-16UL
OCR Text ...ge Saturated Drain Current Gate-source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A UNIT mS V A V C/W MIN. -1.0 -5 TYP. MAX. 360...
Description HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz

File Size 44.99K  /  4 Page

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    Electronic Theatre Controls, Inc.
Part No. AN-937
OCR Text ...RRENT IN DRAIN ID CURRENT source (a) Bipolar Transistor VOLTAGE source (b) HEXFET Figure 1. Bipolar Transistor is Current Driven, HEXFET is Voltage Driven The HEXFET(R)is fundamentally different: it is a voltage-controlled po...
Description Gate Drive Characteristics and Requirements for HEXFET

File Size 365.72K  /  21 Page

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    TEA1210TS

NXP Semiconductors
Part No. TEA1210TS
OCR Text ...As) and others * Supply voltage source for low-voltage chip sets * Portable computers * Battery backup supplies. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1210TS SSOP16 DESCRIPTION GENERAL DESCRIPTION TEA1210TS The TEA1210TS is...
Description High efficiency, high current DC/DC converter

File Size 88.24K  /  20 Page

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    SGS Thomson Microelectronics
Part No. AN1106
OCR Text ...s translate their HC05 assembly source code into ST7 source code. Even if both assembly languages are quite similar, the philosophy and program structure are quite different. A software translator ("migr2st7") has been developed by STMicroe...
Description ST7 - TRANSLATING ASSEMBLY CODE FROM HC05 TO ST7

File Size 47.35K  /  9 Page

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    STP13NK60ZFP STW13NK60Z STB13NK60ZT4 STP13NK60ZT4

STMicroelectronics
Part No. STP13NK60ZFP STW13NK60Z STB13NK60ZT4 STP13NK60ZT4
OCR Text ...DS VGS ID ID IDM (2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Vesd(G-S) G-...
Description    N-channel 600 V, 0.48, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET

File Size 469.50K  /  18 Page

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    FAN6756AMRMY FAN6756MRMY

Fairchild Semiconductor
Part No. FAN6756AMRMY FAN6756MRMY
OCR Text ...eshold voltage for brownout dc source series r=200 k ? to hv pin 90 100 110 v v ac-on threshold voltage for brown-in dc source series r=200 k ? to hv pin 100 110 120 v v ac v ac-on ? v ac-off dc source series r=200 k ...
Description FAN6756 mWSaver PWM Controller
FAN6756?mWSaver?PWM Controller

File Size 1,724.44K  /  20 Page

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    UBA2213AP UBA2213AT UBA2213BP UBA2213BT UBA2213CT

NXP Semiconductors
Part No. UBA2213AP UBA2213AT UBA2213BP UBA2213BT UBA2213CT
OCR Text ...owered using a start-up current source and a dvdt supply. when the voltage on pin hv increases, the v dd capacitor (c vdd ) is charged using the internal jfet current source. the voltage on pin v dd rises until v dd equals v dd(start) ....
Description Non-dimmable driver IC for CFL with boost

File Size 402.95K  /  21 Page

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    Silicon Laboratories Inc.
Part No. AN137
OCR Text ...* teries as their primary power source. The battery charging circuitry for these systems is typically implemented using a fixed-function IC to control * the charging current/voltage profile. The C8051F30x family provides a flexible alternat...
Description LITHIUM ION BATTERY CHARGER USING C8051F300

File Size 290.83K  /  36 Page

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