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    ETRON[Etron Technology, Inc.]
Part No. EM6A9325BG-7.5G EM6A9325BG-8G EM6A9325 EM6A9325BG-1H_LG
OCR Text ... Input Bank Select: BA0 and BA1 defines to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. The bank address BA0 and BA1 is used latched in mode register set. CKE BA0, BA1 A0-A11 Input Address In...
Description 4M x 32 Low Power SDRAM (LPSDRAM)

File Size 595.30K  /  51 Page

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    PNP-1090B-P22 PNP-1090X-P22 PNP-1090A-P22 PNP-1090C-P22 PNP-1090-P22

Sumida, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. PNP-1090B-P22 PNP-1090X-P22 PNP-1090A-P22 PNP-1090C-P22 PNP-1090-P22
OCR Text ...erly for the application. START defines the lowest desired frequency of operation. STOP defines the highest desired frequency of operation. STEP is used to channelize the band and REFERENCE defines the frequency of the external reference. O...
Description PLL FREQUENCY SYNTHESIZER, 250 MHz, QCC22
Intelligent Frequency Synthesizers

File Size 184.46K  /  8 Page

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    PCF85116-3T_01 PCF85116-3P_01 PCF85116-3 PCF85116-3P/01 PCF85116-3T/01

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PCF85116-3T_01 PCF85116-3P_01 PCF85116-3 PCF85116-3P/01 PCF85116-3T/01
OCR Text ...o-LOW, while the clock is HIGH, defines the START condition. Stop data transfer -- A change in the state of the data line, from LOW-to-HIGH, while the clock is HIGH, defines the STOP condition. Data valid -- The state of the data line repre...
Description 2048 x 8-bit CMOS EEPROM with I2C-bus interface

File Size 158.99K  /  21 Page

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    VCC4-A3A-50M000 VCC4-H3F-50M000 VCC4-B3B-50M000 VCC4-B3C-50M000 VCC4-B3D-50M000 VCC4-B3E-50M000 VCC4-B3F-50M000 VCC4-C3A

VECTRON[Vectron International, Inc]
Part No. VCC4-A3A-50M000 VCC4-H3F-50M000 VCC4-B3B-50M000 VCC4-B3C-50M000 VCC4-B3D-50M000 VCC4-B3E-50M000 VCC4-B3F-50M000 VCC4-C3A-50M000 VCC4-C3B-50M000 VCC4-C3C-50M000 VCC4-C3D-50M000 VCC4-C3E-50M000 VCC4-C3F-50M000 VCC4-D3A-50M000 VCC4-D3B-50M000 VCC4-E3A-50M000 VCC4-E3F-50M000 VCC4-F3A-50M000 VCC4-F3B-50M000 VCC4-F3C-50M000 VCC4-G3A-50M000 VCC4-G3B-50M000 VCC4-G3D-50M000 VCC4-A3B-50M000 VCC4-A3C-50M000 VCC4-A3D-50M000 VCC4-A3E-50M000 VCC4-A3F-50M000 VCC4-B3A-50M000 VCC4-D3C-50M000 VCC4-D3D-50M000 VCC4-D3E-50M000 VCC4-D3F-50M000 VCC4-E3B-50M000 VCC4-E3C-50M000 VCC4-E3D-50M000 VCC4-E3E-50M000 VCC4-G3F-50M000 VCC4 VCC4-F3D-50M000 VCC4-H3D-50M000 VCC4-H3E-50M000 VCC4-G3E-50M000 VCC4-F3E-50M000 VCC4-H3B-50M000 VCC4-F3F-50M000 VCC4-G3C-50M000 VCC4-H3C-50M000 VCC4-B3B-14M318 VCC4-E3C-11M2896 VCC4-E3C-16M000 VCC4-E3C-12M353 VCC4-E3C-13M500 VECTRONINTERNATIONAL-VCC4-E3B-16M800 VCC4-A3F-16M000 VCC4-A3F-13M500 VCC4-A3F-11M2896 VCC4-A3F-12M272 VCC4-A3F-16M376 VCC4-G3B-37M500
OCR Text ...nd) is recommended. 2. Figure 1 defines these parameters. Figure 2 illustrates the operating conditions under which these parameters are tested and specified. 3. Symmetry is measured defined as On Time/Period. 4. Includes calibration tolera...
Description CRYSTAL OSCILLATOR, CLOCK, 37.5 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 16.376 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 12.272 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 13.5 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 12.353 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 16 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 11.2896 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 14.318 MHz, CMOS OUTPUT
1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator

File Size 145.98K  /  9 Page

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    WED3DL644V10BI WED3DL644V7BI WED3DL644V10BC WED3DL644V8BC WED3DL644V8BI WED3DL644V7BC WED3DL644V

WEDC[White Electronic Designs Corporation]
Part No. WED3DL644V10BI WED3DL644V7BI WED3DL644V10BC WED3DL644V8BC WED3DL644V8BI WED3DL644V7BC WED3DL644V
OCR Text ...k Activate command cycle, A0-11 defines the row address (RA0-11) when sampled at the rising clock edge. During a Read or Write command cycle, A0-7 defines the column address (CA0-7) when sampled at the rising clock edge. In addition to the ...
Description 4MX64 SDRAM

File Size 721.03K  /  28 Page

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    NWK914D NWK914DGP1N NWK935 NWK914S NWK914B NWK914DCG

Zarlink Semiconductor Inc
Mitel Networks Corporation
http://
Part No. NWK914D NWK914DGP1N NWK935 NWK914S NWK914B NWK914DCG
OCR Text ...REF' and 'TXGND'. This resistor defines an internal reference current derived from an on-chip bandgap reference. Final output current at the 'TXO' outputs is a multiple of this current and is defined as:I TXO(mA) Transmit Section Times...
Description PHY/PMD High Speed Copper Media Transceiver with Clock Recovery

File Size 154.53K  /  9 Page

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    Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. NWK914D NWK914CG NWK914GP1N
OCR Text ...REF' and 'TXGND'. This resistor defines an internal reference current derived from an on-chip bandgap reference. Final output current at the 'TXO' outputs is a multiple of this current and is defined as:I TXO(mA) Transmit Section Times...
Description PHY/PMD High Speed Copper Media Transceiver

File Size 121.70K  /  9 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. L3092N L3000N L3092 L3092FN L3000NSO 1336
OCR Text ...al signal input (3 levels) that defines device status with pin 12. Digital signal input (3 levels) that defines device status with pin 11. High precision scaled transversal line current signal. Ia + Ib IT = 8 9 10 11 12 13 1,10,11, 20...
Description From old datasheet system
SLIC KIT OPTIMIZED FOR APPLICATIONS WITH BOTH FIRST AND SECOND GENERATION COMBOS

File Size 408.46K  /  32 Page

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    M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T3354BG_Z0-CD5_CC M378T3354BG_Z3-CD5_CC M378T3354BG3-CD5 M378T6553BG_Z0-CD

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T3354BG_Z0-CD5_CC M378T3354BG_Z3-CD5_CC M378T3354BG3-CD5 M378T6553BG_Z0-CD5_CC M378T6553BG_Z3-CD5_CC M391T2953BG_Z0-CD5_CC M391T2953BG_Z3-CD5_CC M391T6553BG_Z0-CD5_CC M378T2953BGZ0-CD5/CC M378T2953BGZ3-CD5/CC M378T3354BGZ0-CD5/CC M378T3354BGZ3-CD5/CC M378T6553BGZ0-CD5/CC M378T6553BGZ3-CD5/CC M391T2953BGZ0-CD5/CC M391T2953BGZ3-CD5/CC M391T6553BGZ0-CD5/CC M391T6553BGZ3-CD5/CC
OCR Text ...te command cycle, Address input defines the row address (RA0-RA13) During a Read or Write command cycle, Address input defines the colum address, In addition to the column address, AP is used to invoke autoprecharge operation at the end of ...
Description 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC

File Size 463.49K  /  22 Page

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    K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G0

Samsung semiconductor
Part No. K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0
OCR Text ...e Register. 00h Command(Read) : defines the starting address of the 1st half of the register. 01h Command(Read) : defines the starting address of the 2nd half of the register. * A8 is set to "Low" or "High" by the 00h or 01h Command. * L mu...
Description 256M x 8 Bits NAND Flash Memory

File Size 886.25K  /  38 Page

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