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				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...e Register. 00h Command(Read) : defines the starting address of the 1st half of the register. 01h Command(Read) : defines the starting address of the 2nd half of the register. * A8 is set to "Low" or "High" by the 00h or 01h Command. 3 ...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...e Register. 00h Command(Read) : defines the starting address of the 1st half of the register. 01h Command(Read) : defines the starting address of the 2nd half of the register. * A8 is set to "Low" or "High" by the 00h or 01h Command. * The ...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM636165VE-55 EM636165VE-6
OCR Text	...11 input bank select: a11(bs) defines to which bank the bankactivate, read, write, or bankprecharge command is being applied. a0-a10 input address inputs: a0-a10 are sampled during the bankactivate command (row address a0-a10) and re...
Description	1Mega x 16 Synchronous DRAM (SDRAM)
File Size	777.73K / 74 Page	View it Online	Download Datasheet

				Integrated Circuit Solu...
Part No.	IC43R16160-7T
OCR Text	... activate command cycle, a0-a12 defines the row address (ra0- ra12) when sampled at the rising clock edge. during a read or write command cycle, a0-a8 defines the column address (ca0- ca8) when sampled at the rising clock edge. in addition ...
Description	4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
File Size	1,338.14K / 56 Page	View it Online	Download Datasheet

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