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				Etron Technology, Inc.
Part No.	EM639325TS-5IG
OCR Text	...ut bank activate: ba0 and ba1 defines to which bank the bankactivate, read, write, or bankprecharge command is being applied. the bank address ba0 and ba1 is used latched in mode register set. a0-a11 input address inputs: a0-a11 ar...
Description	4M x 32 bit Synchronous DRAM (SDRAM)
File Size	411.02K / 47 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.]
Part No.	EM6AA320-XXMS EM6AA320BI-3.6MS EM6AA320BI-5MS_5MSG EM6AA320BI-4MS_4MSG EM6AA320BI-3.3MS EM6AA320BI-6MS_6MSG EM6AA320BI-4MS/4MSG EM6AA320BI-6MS/6MSG EM6AA320BI-5MS/5MSG
OCR Text	...modes. Bank Select: BA0 and BA1 defines to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. They also define which Mode Register or Extended Mode Register is loaded during a Mode Register Set command. Add...
Description	8M x 32 DDR SDRAM
File Size	361.51K / 16 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.]
Part No.	EM6AA320BI-4S EM6AA320BI-3.6S EM6AA320BI-3.3S EM6AA320BI-5S EM6AA320
OCR Text	...modes. Bank Select: BA0 and BA1 defines to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. They also define which Mode Register or Extended Mode Register is loaded during a Mode Register Set command. Add...
Description	8M x 32 DDR SDRAM
File Size	362.74K / 17 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	NT5SV8M8DT NT5SV8M8DT-6K NT5SV8M8DT-7 NT5SV8M8DT-7K NT5SV4M16DT-7K NT5SV16M4DT NT5SV16M4DT-6K NT5SV16M4DT-7 NT5SV16M4DT-7K NT5SV4M16DT NT5SV4M16DT-6K NT5SV4M16DT-7
OCR Text	... Activate command cycle, A0-A11 defines the row address (RA0-RA11) when sampled at the rising clock edge. During a Read or Write command cycle, A0-A9 defines the column address (CA0-CA9) when sampled at the rising clock edge. A10 is used to...
Description	64Mb Synchronous DRAM
File Size	202.42K / 21 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
Part No.	GAL20V8Z GAL20V8Z-12QJ GAL20V8Z-12QP GAL20V8Z-15QJ GAL20V8Z-15QP GAL20V8ZD-12QJ GAL20V8ZD-12QP GAL20V8ZD-15QJ GAL20V8ZD-15QP
OCR Text	... Mode - SYN=0. - AC0=1. - XOR=0 defines Active Low Output. - XOR=1 defines Active High Output. - AC1=0 defines this output configuration. - Pin 1(2) controls common CLK for the registered outputs. - Pin 13(16) controls common OE for the reg...
Description	Zero Power E2CMOS PLD EE PLD, 15 ns, PDIP24 Zero Power E2CMOS PLD EE PLD, 15 ns, PQCC28
File Size	302.75K / 19 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] Lattice Semiconductor Corp
Part No.	GAL20V8 GAL20V8B-10LI GAL20V8B-10LJ GAL20V8B-10LJI GAL20V8B-10LPI GAL20V8B-15LJ GAL20V8B-15LJI GAL20V8B-15LP GAL20V8B-15LPI GAL20V8B-15QJ GAL20V8B-15QP GAL20V8B-20QJI GAL20V8B-20QPI GAL20V8B-25LJ GAL20V8B-25LJI GAL20V8B-25LP GAL20V8B-25LPI GAL20V8B-25QJ GAL20V8B-25QJI GAL20V8B-25QP GAL20V8B-25QPI GAL20V8B-7LI GAL20V8B-7LP GAL20V8C-10LJI GAL20V8C-10LP GAL20V8C-5LJ GAL20V8C-7LJ GAL20V8B-10LP GALB20V8B-10LI GALB20V8B-10LJ GALB20V8B-10LJI GALB20V8B-10LPI GALB20V8B-15LJ GALB20V8B-15LJI GALB20V8B-15LP GALB20V8B-15LPI GALB20V8B-15QJ GALB20V8B-15QP GALB20V8B-20QPI GALB20V8B-25LJI GALB20V8B-25LPI GALB20V8B-25QJI GALB20V8B-25QP GALB20V8B-25QPI GALB20V8B-7LI GALB20V8B-7LP
OCR Text	... Mode - SYN=0. - AC0=1. - XOR=0 defines Active Low Output. - XOR=1 defines Active High Output. - AC1=0 defines this output configuration. - Pin 1 controls common CLK for the registered outputs. - Pin 13 controls common OE for the registered...
Description	SIMPLE-EEPLD,PAL-TYPE,CMOS,DIP,24PIN,PLASTIC High Performance E2CMOS PLD Generic Array Logic
File Size	304.30K / 23 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q67100-Q1337 HB39S16A HYB39S16160AT-10 HYB39S16160AT-8 Q67100-Q1323 Q67100-Q1327 Q67100-Q1331 Q67100-Q1333 Q67100-Q1335 HYB39S16800AT-10 HYB39S16800AT-8 HYB39S16400
OCR Text	...ctivate command cycle, A0 - A10 defines the row address (RA0 - RA10) when sampled at the rising clock edge. During a Read or Write command cycle, A0 - A9 defines the column address (CA0 - CAn) when sampled at the rising clock edge. CAn depe...
Description	From old datasheet system 16 MBit Synchronous DRAM
File Size	145.67K / 22 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.]
Part No.	EM636165TS_VE-7L EM636165TS_BE-7LG EM636165TS_VE-7 EM636165TS_BE-10G EM636165TS_BE-55G EM636165TS_BE-5G EM636165TS_BE-6G EM636165TS_BE-7G EM636165TS_BE-8G EM636165TS_VE-10 EM636165TS_VE-5 EM636165TS_VE-55 EM636165TS_VE-6 EM636165TS_VE-8 EM636165_06 EM636165
OCR Text	...dby power. Bank Select: A11(BS) defines to which bank the BankActivate, Read, Write, or BankPrecharge command is being applied. Address Inputs: A0-A10 are sampled during the BankActivate command (row address A0-A10) and Read/Write command (...
Description	1Mega x 16 Synchronous DRAM (SDRAM)
File Size	788.96K / 75 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE6 M470T6554CZ0-CLE7 M470T6554CZ3-CCC M470T6554CZ3-CD5 M470T6554CZ3-CE6 M470T6554CZ3-CE7 M470T6554CZ3-CLCC M470T6554CZ3-CLD5 M470T6554CZ3-CLE6 M470T6554CZ3-CLE7 M470T3354CZX M470T2953CZ0-CCC M470T2953CZ0-CD5 M470T2953CZ0-CE6 M470T2953CZ0-CE7 M470T2953CZ0-CLCC M470T2953CZ0-CLD5 M470T2953CZ0-CLE6 M470T2953CZ0-CLE7 M470T2953CZ3-CCC M470T2953CZ3-CD5 M470T2953CZ3-CE6 M470T2953CZ3-CE7 M470T2953CZ3-CLCC M470T2953CZ3-CLD5 M470T2953CZ3-CLE6 M470T2953CZ3-CLE7 M470T3354CZ0-CCC M470T3354CZ0-CD5 M470T3354CZ0-CE6 M470T3354CZ0-CE7 M470T3354CZ0-CLCC M470T3354CZ0-CLD5 M470T3354CZ0-CLE6 M470T3354CZ0-CLE7 M470T3354CZ3 M470T3354CZ3-CCC M470T3354CZ3-CD5 M470T3354CZ3-CE6 M470T3354CZ3-CE7 M470T3354CZ3-CLCC M470T3354CZ3-CLD5 M470T3354CZ3-CLE6 M470T3354CZ3-CLE7
OCR Text	... a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross point of the...
Description	40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC PATCHCORD SQ SCKT-ALLIG CLIP RED
File Size	325.88K / 18 Page	View it Online	Download Datasheet

For defines Found Datasheets File :: 11493 Search Time::3.437ms
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