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PTE2030G4A - MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

PTE2030G4A_1827633.PDF Datasheet


Part No.	PTE2030G4A PTE2100G1A PTE2030G1A PTE2005G1A
Description	MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
File Size	179.37K / 5 Page
Maker	N/A
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Full text search : MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

Product Description search : MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

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