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						|  |  |  | TOSHIBA 
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						| Part No. | TPN7R506NH 
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						| OCR Text | ...: q sw  = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on)  = 6.0 m ?  (typ.) (v gs  = 10 v) (4) low leakage current: i dss  = 10   a (max) (v ds  = 60 v) (5) enhancement mode: v th  = 2.0 to 4.0 v (v ds  = 10 v, i d  = 0.2 ma) 3.... |  
						| Description | Power MOSFET (N-ch single 30V<VDSS≤60V) 
 
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						| File Size | 237.68K  / 
						9 Page | 
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						|  |  |  | TOSHIBA 
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						| Part No. | TPC6130 
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						| OCR Text | ... small and thin package (2) low drain-source on-resistance: r ds(on)  = 86 m ?  (typ.) (v gs  = -4.5 v) (3) low leakage current: i dss  = -10   a (max) (v ds  = -20 v) (4) enhancement mode: v th  = -0.5 to -1.2 v (v ds  = -10 v, i d  = -0.2... |  
						| Description | Power MOSFET (P-ch single) 
 
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						| File Size | 221.81K  / 
						9 Page | 
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						it Online |  Download Datasheet
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