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IRF[International Rectifier]
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| Part No. |
IRHMS597260 IRHMS593260
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| OCR Text |
to-254aa)
Product Summary
Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103 0.103 ID -32A -32A
IRHMS597260 200V, P-CHANNEL
4#
TECHNOLOGY
c
Low-Ohmic to-254aa
International Rec... |
| Description |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a to-254aa package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a to-254aa package
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic to-254aa)
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| File Size |
202.16K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM8Z60 IRHM3Z60 IRHM4Z60 IRHM7Z60
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| OCR Text |
to-254aa)
Product Summary
Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014 0.014 0.014 0.014 ID 35*A 35*A 35*A 35*A
IRHM7Z60 30V, N-CHANNEL
RAD-... |
| Description |
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-254aa package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-254aa package
RADIATION HARDENED POWER MOSFET THRU-HOLE (to-254aa)
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| File Size |
119.58K /
8 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHM8260 IRHM3260 IRHM4260 IRHM7260
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| OCR Text |
...7433 JANSG2N7433 JANSH2N7433
to-254aa
International Rectifiers RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satel... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA
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| File Size |
263.31K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7C50SE IRHM2C50SE
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| OCR Text |
...Ts demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifi...254AA
3 2 1
Conforms to JEDEC Outline to-254aa
Legend: 1 Drain 2 Source 3 Gate Notes: 1. Di... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
101.94K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGMC30U
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| OCR Text |
...ey provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with f...254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC ... |
| Description |
600V DISCRETE Hi-Rel IGBT in a to-254aa package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
543.07K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM440 JANTX2N7222 JANTXV2N7222 IRFM440-15
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| OCR Text |
to-254aa)
Product Summary
Part Number
IRFM440
IRFM440 JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.85
ID
8.0A
HEXFET(R) MOSFET technology is the key to Internation... |
| Description |
Simple Drive Requirements
From old datasheet system
POWER MOSFET THRU-HOLE (to-254aa)
500V Single N-Channel Hi-Rel MOSFET in a to-254aa package
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| File Size |
170.93K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGMC30F
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| OCR Text |
...ey provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with f...254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
541.07K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM460
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| OCR Text |
to-254aa)
Product Summary
Part Number
IRFM460
IRFM460 500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.27
ID
19A
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET tra... |
| Description |
POWER MOSFET THRU-HOLE (to-254aa)
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| File Size |
203.24K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM360
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| OCR Text |
to-254aa)
Product Summary
Part Number
IRFM360
IRFM360 400V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.20
ID
23A
HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET tra... |
| Description |
400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY
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| File Size |
511.44K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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