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  to-254aa Datasheet PDF File

For to-254aa Found Datasheets File :: 320    Search Time::2.281ms    
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    APT5040CNR

ADPOW[Advanced Power Technology]
Part No. APT5040CNR
OCR Text TO-254 G S APT5040CNR TM 500V 13.0A 0.400 POWER MOS IV * Faster Switching * Low Gate Charge MAXIMUM RATINGS Symbol VDSS ID I...254AA Package Outline 13.84 (.545) 13.59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) ...
Description POWER MOS IV 500V 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 52.43K  /  4 Page

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    IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15

IRF[International Rectifier]
Part No. IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15
OCR Text to-254aa) IRF5M5210 100V, P-CHANNEL Product Summary Part Number IRF5M5210 BVDSS -100V RDS(on) 0.07 ID -34A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to a...
Description -100V Single P-Channel Hi-Rel MOSFET in a to-254aa package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings

File Size 111.77K  /  7 Page

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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text ... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...254AA G S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. CAUTION:...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3

INTERSIL[Intersil Corporation]
Part No. FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text ... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...254AA G S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. CAU...
Description 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 45.96K  /  8 Page

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    IRHM7460SE

IRF[International Rectifier]
Part No. IRHM7460SE
OCR Text ...Ts demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifi...254AA Legend: 1 Drain 2 Source 3 Gate Notes: 1. Dimensioning and tolerancing per ANSIY14.5M-1982 ...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

File Size 99.74K  /  4 Page

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    JANSR2N7404 FN4491

INTERSIL[Intersil Corporation]
Part No. JANSR2N7404 FN4491
OCR Text ... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...254AA Also available at other radiation and screening levels. See us on the web, Intersil's home ...
Description From old datasheet system
15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET

File Size 44.35K  /  8 Page

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    JANSR2N7407 FN4636

INTERSIL[Intersil Corporation]
Part No. JANSR2N7407 FN4636
OCR Text ... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...254AA G S D Ordering Information PART NUMBER JANSR2N7407 PACKAGE to-254aa BRAND JANSR2N7407 ...
Description Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 54.70K  /  8 Page

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    APT1004 APT1004RCN

ADPOW[Advanced Power Technology]
Part No. APT1004 APT1004RCN
OCR Text TO-254 G S APT1004RCN 1000V 3.6A 4.00 TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Sourc...254AA Package Outline 13.84 (.545) 13.59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) ...
Description POWER MOS IV 1000V 3.6A 4.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 49.78K  /  4 Page

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    OM6017SA OM6018SA OM6019SA OM6020SA OM6019SW OM6020SW OM6018SW

International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
Microsemi, Corp.
Part No. OM6017SA OM6018SA OM6019SA OM6020SA OM6019SW OM6020SW OM6018SW
OCR Text to-254aa PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES * * * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Same as I...
Description 200V Single N-Channel Hi-Rel MOSFET in a D3 package
200V Single N-Channel Hi-Rel MOSFET in a to-254aa package
100V Single N-Channel Hi-Rel MOSFET in a to-254aa package
400V Single N-Channel Hi-Rel MOSFET in a D3 package
400V Single N-Channel Hi-Rel MOSFET in a to-254aa package
500V Single N-Channel Hi-Rel MOSFET in a D3 package
500V Single N-Channel Hi-Rel MOSFET in a to-254aa package
POWER MOSFET IN HERMETIC ISOLATED to-254aa PACKAGE
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 400V单N沟道高可靠性的D3的封装MOSFET

File Size 44.34K  /  4 Page

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    APT4030 APT4030CNR

ADPOW[Advanced Power Technology]
Part No. APT4030 APT4030CNR
OCR Text TO-254 G S APT4030CNR TM 400V 15.0A 0.300 POWER MOS IV * Faster Switching * Low Gate Charge MAXIMUM RATINGS Symbol VDSS ID I...254AA Package Outline 13.84 (.545) 13.59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) ...
Description POWER MOS IV 400V 15.0A 0.300 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 52.47K  /  4 Page

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