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				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SB1002
OCR Text	...-1.2 -- -- Unit V V V A A test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -50 V, IE = 0 VEB = -4 V, IC = 0 VCE = -2 V, IC = -0.1 A VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A...
Description	Silicon PNP Transistor Silicon PNP Epitaxial
File Size	30.84K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1012 2SB1012K 2SB1012_K
OCR Text	...- -- V V V V V s s Unit V V A A test conditions I C = -10 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -1 A1 I C = -1 A, IB = -1 mA1 I C = -1.5 A, IB = -1.5 mA1 I C = -1 A, IB = -1 mA1 I C =...
Description	Silicon PNP Epitaxial
File Size	32.59K / 6 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTN7451Q8
OCR Text	...symbol min. typ. max. unit test conditions static bv dss 150 - - v v gs =0, i d =250 a v gs(th) 2.0 2.7 4.0 v v ds = v gs , i d =250 a g fs - 9 - s v ds =10v, i d =2.2a i gss - - 100 na v gs = 30 - -...
Description	N-Channel LOGIC Level Enhancement Mode Power MOSFET
File Size	278.92K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SB1025
OCR Text	...1 -0.9 -- -- Unit V V V A test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C = -500 mA, I B = -50 mA (P...
Description	Silicon PNP Epitaxial
File Size	32.26K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1026
OCR Text	...1 -0.9 -- -- Unit V V V A test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C = -500 mA, I B = -50 mA (P...
Description	Silicon PNP Epitaxial
File Size	24.16K / 5 Page	View it Online	Download Datasheet

				YENYO TECHNOLOGY Co., Ltd YENYO TECHNOLOGY Co., L...
Part No.	HFR60A12PD
OCR Text	... notes : (2) reverse recovery test conditions i f = 15a, di f/ dt = 100a/us. (3) junction capacitance test conditions : v r = 10v,i f = 0a. (4) thermal resistance junction to case. (1) reverse recovery test conditions i f =0.5a ,i r ...
Description	Hyperfast Recovery Rectifier
File Size	936.43K / 3 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	2N2920U 2N2920L
OCR Text	...otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 60 vdc collector-base voltage v cbo 70 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 30 madc one section 1 ...
Description	NPN SILICON DUAL TRANSISTOR
File Size	284.66K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPD5758T6J UPD5758T6J-E4-A
OCR Text	...e specified) parameter symbol test conditi ons min. typ. max. unit circuit current i dd v dd = 1.5v, v in = 0 v 140 190 250 a input capacitance c input v dd = 1.5 v, f = 1 mhz ? 1.5 ? pf voltage gain g v v dd = 1.5 ...
Description	Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
File Size	169.82K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8005-H
OCR Text	...ability data (i.e. reliabi lity test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-3x1a weight: 0.02 g (typ.) circuit co...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	235.05K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8A04-H
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 0.95 0.05 3.5 0.2 0.8 0.1 5 8 0.15 0.05 4 0.59...
Description	TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
File Size	204.00K / 8 Page	View it Online	Download Datasheet

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