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ST Microelectronics
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| Part No. |
BUL128D-B
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| OCR Text |
...ise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = -1.5 v) v ce = 700 v v ce = 700 v t c = 125 o c 100 500 m a m a i ceo collector cut-off current (i b = 0) v ce =... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
229.42K /
7 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TPH7R506NH
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| OCR Text |
...lity data (i.e. reliability test report and estimated failure rate, etc). sop advance
2014-01-07 rev.4.0 tph7r506nh 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics ch... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
235.24K /
9 Page |
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it Online |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
2SA673A 2SA673AK 2SA673A_K
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| OCR Text |
... MHz s s s Unit V V V A A V V V test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 VEB = -3 V, IC = 0 VEB = -3 V, IC = -10 mA I C = -150 mA, IB = -15 mA*2 I C = -150 mA, IB = -15 mA*2 VCE = -3 V,... |
| Description |
Silicon PNP Epitaxial
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| File Size |
35.43K /
8 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCC8001-H
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| OCR Text |
...iability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-3x1a weight: 0.02 g (typ.) circuit c... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
231.59K /
7 Page |
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it Online |
Download Datasheet |
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