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germanium Datasheet PDF File

For germanium Found Datasheets File :: 698 Search Time::1.422ms
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				Electronic Theatre Controls, Inc. ETC[ETC] Stanford Microdevices
Part No.	SGA-5486 SGA-5486-TR2 SGA-5486-TR1
OCR Text	...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance...
Description	DC-2400 MHz 3.5V SiGe Amplifier
File Size	217.40K / 7 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	SGA-5263
OCR Text	...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance...
Description	DC-4500 mhz silicon germanium CASCADEABLE GAIN BLOCK
File Size	256.54K / 5 Page	View it Online	Download Datasheet

				SIGE[SiGe Semiconductor, Inc.]
Part No.	PA2423U-EV1 PA2423U-R PA2423U
OCR Text	...ithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423U is designed for 2.4 GHz wireless applications, including BluetoothTM Class1 and 2.4 GHz cordless telephone applications. It delivers +22.5 dBm output power making it ...
Description	RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
File Size	226.47K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP650
OCR Text	germanium RF Transistor Preliminary data * For high power amplifiers * Ideal for low phase noise oscilators * Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz * Gold metallization for high reliability * 70 GHz...
Description	Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon germanium RF Transistor
File Size	207.23K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP650E6327 BFP650
OCR Text	germanium RF Transistor Preliminary data For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability 70 GHz fT - Sili...
Description	NPN Silicon germanium RF Transistor
File Size	179.20K / 6 Page	View it Online	Download Datasheet

				SiGe Semiconductor, Inc... SIGE[SiGe Semiconductor, Inc.]
Part No.	SE2425U-R SE2425U-EK1 SE2425U
OCR Text	...ithic, high-efficiency, silicon-germanium power amplifier IC, the SE2425U is designed for 2.4 GHz wireless applications, including BluetoothTM Class 1 basic rate and enhanced data rate applications. It delivers +25 dBm output power in stand...
Description	RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
File Size	221.91K / 10 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	SGA-6589
OCR Text	...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance...
Description	RELAY BASE DC 4000 MHZ SILICON germanium HBT CASCADEABLE GAIN BLOCK
File Size	565.19K / 8 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SGA-8343X
OCR Text	...X is a high performance Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. T...
Description	Reliability Qualification Report 可靠性鉴定报
File Size	173.86K / 9 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	SGA-0363
OCR Text	...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance...
Description	DC 5000 MHZ SILICON germanium CASCADEABLE GAIN BLOCK
File Size	258.78K / 5 Page	View it Online	Download Datasheet

				Stanford Microdevices
Part No.	SGA-5386-TR2 SGA-5386-TR1 SGA-5386
OCR Text	...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance...
Description	DC-3200 MHz Silicon germanium HBT Cascadeable Gain Block
File Size	221.73K / 7 Page	View it Online	Download Datasheet

For germanium Found Datasheets File :: 698 Search Time::1.422ms
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