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C4460 RXA101 MJE803T LT1962 1E330 E142AHF CH5286 09081
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  germanium Datasheet PDF File

For germanium Found Datasheets File :: 701    Search Time::1.547ms    
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    CEL[California Eastern Labs]
Part No. UPC3227TB-E3-A UPC3227TB UPC3227TB-E3
OCR Text germanium MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process...
Description BIPOLAR ANALOG INTEGRATED CIRCUIT

File Size 176.60K  /  13 Page

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    CEL[California Eastern Labs]
Part No. UPC3226TB-E3-A UPC2708TB UPC2709TB UPC2710TB UPC2776TB UPC3223TB UPC3225TB UPC3226TB UPC3226TB-E3
OCR Text germanium MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Sp...
Description BIPOLAR ANALOG INTEGRATED CIRCUIT

File Size 225.13K  /  13 Page

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    SGL-0163

Stanford Microdevices
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. SGL-0163
OCR Text ...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking an...
Description 800-1000 MHz low noise amplifier 50 Ohm, silicon germanium
800-1000 MHZ LOW NOISE AMPLIFIER 50 OHM SILICON germanium

File Size 210.37K  /  6 Page

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    SGL-0363Z

List of Unclassifed Manufacturers
Sirenza Microdevices, Inc
Part No. SGL-0363Z
OCR Text ...is RFIC uses the latest Silicon germanium HBT process. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is a...
Description 5-2000 MHZ LOW NOISE AMPLIFIER SILICON germanium

File Size 279.78K  /  9 Page

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    FOA11002A1

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. FOA11002A1
OCR Text ...or SDH/SONET systems in Silicon germanium technology. This new device is a key component for future high speed optical communication systems for regional, metropolitan and backbone transport data networks at the highest speeds up to 10.7 Gb...
Description Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications 半导体解决方案高Communi阳离子和光纤应用

File Size 221.91K  /  2 Page

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    CEL[California Eastern Labs]
Part No. UPC3225TB-E3-A UPC3225TB UPC3225TB-E3
OCR Text germanium MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High S...
Description BIPOLAR ANALOG INTEGRATED CIRCUIT

File Size 344.12K  /  16 Page

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    SGA-2386-TR2 SGA-2386 SGA-2386-TR1

STANFORD[Stanford Microdevices]
Part No. SGA-2386-TR2 SGA-2386 SGA-2386-TR1
OCR Text ...is RFIC uses the latest Silicon germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance...
Description DC-2800 MHz Silicon germanium HBT Cascadeable Gain Block 直流- 2800 MHz的硅锗HBT的连增益
HEATSINK TO-220 PC CU

File Size 227.95K  /  7 Page

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    TACHYONICS[Tachyonics CO,. LTD]
Part No. THM1001TE
OCR Text germanium power amplifier IC, the THM1001TE is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output power, making it capable of ov...
Description SiGe HBT MMIC POWER AMPLIFIER

File Size 134.88K  /  9 Page

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    Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
Part No. R5509-72 R5509-42
OCR Text ... near infrared detectors like a germanium diode which is so far commonly used in this range. FEATURES GUsing a "low power excitation light" allows high-precision measurement not affected by strong excitation light. High gain and low no...
Description NIR PHOTOMULTIPLIER TUBES

File Size 389.92K  /  12 Page

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    SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
Part No. PA2423MB-EV PA2423 PA2423MB
OCR Text ...ithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency - making it capable of overcoming ...
Description 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

File Size 211.29K  /  10 Page

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For germanium Found Datasheets File :: 701    Search Time::1.547ms    
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