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  5.5a-ifsm Datasheet PDF File

For 5.5a-ifsm Found Datasheets File :: 6687    Search Time::1.641ms    
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    ROHM[Rohm]
Part No. RF051VA2S
OCR Text ...FSM Tj Tstg Limits 200 200 0.5 5 150 -55 to +150 Unit V V A A Min. - Typ. - Max. 0.98 10 25 Unit V A ns Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 0.8 0.5 2.0 1/3 RF051VA2S Diodes Electrical ch...
Description    Fast recovery diode

File Size 108.06K  /  4 Page

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    RD0506LS-SB5

Sanyo Semicon Device
Part No. RD0506LS-SB5
OCR Text ...bol VRRM Conditions Ratings 600 5 Tc=25C (SANYO's ideal heat dissipation condition) Package limited Sine wave, 10ms single pulse 12 120 150 ...5A VR=600V IF=5A, di / dt=100A/s IF=0.5A, IR=1A Between the junction part and the case : smoothing c...
Description Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode

File Size 228.32K  /  3 Page

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    RF2001T3D11

Rohm
Part No. RF2001T3D11
OCR Text ....3 0.8 (1) (2) (3) 10.00.3 0.1 5.00.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 (1) ...5a 300us time mounted on epoxy board 10 100 1000 0.1 1 10 100 t ifsm 1 10 100 1000 110100 8.3ms ifsm...
Description Fast recovery diodes

File Size 965.88K  /  4 Page

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    RF071M2STR

Rohm
Part No. RF071M2STR
OCR Text ...1 10 100 1000 1 10 100 t ifsm 0 5 10 15 20 25 30 ave:12.2ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacita...
Description Fast Recovery Diode

File Size 331.12K  /  4 Page

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    MCH5812

Sanyo Semicon Device
Part No. MCH5812
OCR Text ... 225 120 31 25 9 29 18 22 2.3 0.5 0.75 0.94 1.2 165 235 340 20 1 10 1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ra...5A 1.0A .1A, I D=0 =1.8 VGS I D= =4.0V , V GS =1.0A ID , VG 0.5A 2.5 S= 4 6 ...
Description Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

File Size 50.99K  /  6 Page

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    MCH5811

Sanyo Semicon Device
Part No. MCH5811
OCR Text ...rd (900mm2!0.8mm) 1unit 20 10 1.5 6 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : QM Any and all SANYO p...5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.30 0.33 20 10 0.33 0....
Description Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

File Size 51.35K  /  6 Page

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    IRF[International Rectifier]
Part No. 20ETF06STRRPBF 20ETF06S 20ETF06SPBF 20ETF06STRL 20ETF06STRLPBF 20ETF06STRR
OCR Text ...voltage V 700 IRRM 150C mA 5 20ETF06SPbF Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM I2t Max. ...5A 0.2 0.05 0.1 10 A 5A 1A 1A 0 0 200 400 600 800 1000 0 0...
Description SURFACE MOUNTABLE FAST SOFT RECOVERY RECTIFIER DIODE

File Size 327.35K  /  8 Page

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    RB085T-90

Rohm
Part No. RB085T-90
OCR Text ...lanar 1.3 0.8 (1) (2) (3) 5.00.2 0.70.1 0.05 8.0 2.60.5 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25...5A VR=90V junction to case Rev.B 1/3 RB085T-90 Diodes Electrical characteristic curves 1...
Description Schottky barrier diode

File Size 193.70K  /  4 Page

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    RF081M2S

Rohm
Part No. RF081M2S
OCR Text ...R-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 900 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:...5A IR=1A Irr=0.25*IR n=10pcs 1000 80 Ifsm 100 8.3ms 8.3ms 60 AVE:69.5A 40 1cyc...
Description Super fast recovery diode

File Size 123.16K  /  4 Page

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    MUBW10-06A6

IXYS, Corp.
IXYS Corporation
Part No. MUBW10-06A6
OCR Text ...max. 20 100 3 600 2 2.3 75 30 2.5 2.8 110 45 80 375 4 5 A nA V V V V ns ns ns ns mJ mJ 435 50 30 pF pF pF S 32.5 2 1.8 0.2 0.3 0.9 250 nC V ...5A 40 TVJ= 100C A VR = 300V IRM 30 IF= 20A IF= 10A IF= 5A 20 0.5 1.0 1.5 VF...
Description Converter - Brake - Inverter Module (CBI1) 11 A, 600 V, N-CHANNEL IGBT

File Size 216.36K  /  8 Page

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