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  27a Datasheet PDF File

For 27a Found Datasheets File :: 1498    Search Time::1.484ms    
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    PROTEC[Protek Devices]
Part No. DA24P DA05CN DA05CP DA05N DA05N_07 DA05P DA12CN DA12CP DA12N DA12P DA15CN DA15CP DA15N DA15P DA24CN DA24CP DA24N DA05N07
OCR Text ...@ @ @ @ @ @ @ @ @ @ @ @ 45A 34A 27a 20A 45A 34A 27a 20A 45A 34A 27a 20A 45A 34A 27a 20A @VWM ID A 200 2 2 2 200 2 2 2 200 2 2 2 200 2 2 2 0V @ 1 MHz C pF 880 440 400 275 880 440 400 275 500 385 300 200 500 385 300 200 Note 1: The "...
Description STANDARD CAPACITANCE TVS ARRAY

File Size 67.55K  /  4 Page

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    WIMA
Part No. MAAP-000068-PKG003
OCR Text ...r 6v / 0.40a 8v / 0.33a 10v / 0.27a small signal gain output vswr input vswr figure 3. saturated output power vs. frequency and quiescent bias condition (vdd / idq) 20 22 24 26 28 30 32 34 36 38 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 freque...
Description 5700 MHz - 8500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 5 X 5 MM, ROHS COMPLIANT, PLASTIC, MLP, QFN-20

File Size 280.65K  /  9 Page

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    Atmel, Corp.
Part No. TH7426AVWOSG TH7426AVWOSNG TH7426AVWOSNGD/T TH7426AVWOSPGB/T TH7426AVWOSPGD/T TH7427aVWOSNGB/T TH7427aVWOSNGD/T TH7427aVWOSPG TH7427aVWOSPGD/T TH7427aVWOSPGS TH74KA26AVWOSG TH74KA26AVWOSNG TH74KA26AVWOSNGD/T
OCR Text 27a near infrared ingaas linear image sensor 300 pixels description these devices are based on a 300 ingaas photodiode li- near array, with a 26m pitch, using an in line pixel layout or a staggered pixel layout. two 150:1 ccd multiplexor ch...
Description IMAGE SENSOR-CCD, 2.50V, SQUARE, SURFACE MOUNT CERAMIC, J LEAD PACKAGE-84

File Size 1,124.71K  /  20 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76633S3S HUFA76633P3 HUFA76633S3ST
OCR Text ... VGS = 10V (Figures 9, 10) ID = 27a, VGS = 5V (Figure 9) ID = 27a, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220 and TO-263 1.03 62 oC/W oC/W TC = ...
Description 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET

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    IRGBC40 IRGBC40F

International Rectifier
Part No. IRGBC40 IRGBC40F
OCR Text ...CE(sat) 2.0V @VGE = 15V, IC = 27a n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having s...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27a)

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    APL5508 APL5508-33AC APL5509-25AC APL5509-27AC APL5509-28AC APL5509-36AC APL5509-40AC APL5509-41AC APL5508R-41AC APL5508

Anpec Electronics Corporation
ANPEC[Anpec Electronics Coropration]
Part No. APL5508 APL5508-33AC APL5509-25AC APL5509-27aC APL5509-28AC APL5509-36AC APL5509-40AC APL5509-41AC APL5508R-41AC APL5508R-42AC APL5509-30AC APL5509-33AC APL5509-44AC APL5509-29AC APL5508R-15AC APL5508R-29AC APL5508R-16AC APL5508R-17AC APL5508R-18AC APL5508R-19AC APL5508R-20AC APL5508R-21AC APL5508R-22AC APL5508R-23AC APL5508R-24AC APL5508R-25AC APL5508R-26AC APL5508R-27aC APL5508R-28AC APL5508R-30AC APL5508R-31AC APL5508R-32AC APL5508R-33AC APL5508R-34AC APL5508R-35AC APL5508R-36AC APL5508R-37AC APL5508R-38AC APL5508R-39AC APL5508R-40AC APL5508R-43AC APL5508R-44AC APL5509-15AC APL5509-16AC APL5509-17AC APL5509-18AC APL5509-19AC APL5509-20AC APL5509-21AC APL5509-22AC APL5509-23AC APL5509-24AC APL5509-26AC APL5509-31AC APL5509-32AC APL5509-34AC APL5509-35AC APL5509-37AC APL5509-38AC APL5509-39AC APL5509-42AC APL5509-43AC APL5509R-45AC APL5508-15AC APL5508-16AC APL5508-17AC APL5508-18AC APL5508-19AC APL5508-20AC APL5508-21AC APL5508-22AC APL5508-23AC APL5508-24AC APL5508-25AC APL5508-26AC APL5508-27aC APL5508-28AC APL5508-29AC APL5508-30AC APL5508-31AC APL5508-32AC APL5508-34AC APL5508-35AC APL5508-36AC APL5508-37AC APL5508-38AC APL5508-39AC APL5508-40AC APL5508-41AC APL5508-42AC APL5
OCR Text ...A 58JX APL5508-26A 58KX APL5508-27a 58LX APL5508-28A 58MX APL5508-29A 58NX APL5508-30A 58OX APL5508-31A 58PX APL5508-32A 58QX APL5508-33A 58RX APL5508-34A 58SX APL5508-35A 58TX APL5508-43A 58UX APL5508-45A 58VX Product Name APL5508R-15A AP...
Description Low IQ, Low Dropout 560mA Fixed Voltage Regulator

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    FQB27P06 FQI27P06 FQI27P06TU FQB27P06TM

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FQB27P06 FQI27P06 FQI27P06TU FQB27P06TM
OCR Text ... TM Features * * * * * * * -27a, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ...
Description 60V P-Channel QFET
60V P-Channel MOSFET
Inductor; Inductor Type:Standard; Inductance:350uH; Series:CMS; DC Resistance Max:0.04ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2A; Leaded Process Compatible:Yes; Leakage Inductance:3uH RoHS Compliant: Yes
Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes

File Size 698.98K  /  9 Page

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    FQP27P06

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FQP27P06
OCR Text ... TM Features * * * * * * * -27a, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating S ...
Description    60V P-Channel MOSFET
Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes

File Size 694.18K  /  8 Page

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    IRG4PC50UDPBF

International Rectifier
Part No. IRG4PC50UDPBF
OCR Text ... typ. = 1.65V @VGE = 15V, IC = 27a n-ch an nel Benefits * Generation 4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minim...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 683.78K  /  10 Page

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    FAIRCHILD
Part No. HGT5A27N120BN
OCR Text ...FF)I tfI EON1 EON2 EOFF IC = 27a, VGE = 15V VGE = 20V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 250A, VCE = VGE TJ = 150oC, RG = 3, VGE...
Description
File Size 176.76K  /  9 Page

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