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  27a Datasheet PDF File

For 27a Found Datasheets File :: 1518    Search Time::1.469ms    
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    IRGPC40FD2

IRF[International Rectifier]
Part No. IRGPC40FD2
OCR Text ...t) 2.0V G @VGE = 15V, IC = 27a E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one pa...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27a)

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    IRGPC40 IRGPC40F

IRF[International Rectifier]
Part No. IRGPC40 IRGPC40F
OCR Text ...CE(sat) 2.0V @VGE = 15V, IC = 27a n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having s...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27a)

File Size 214.50K  /  6 Page

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    IRF6715MPBF09

International Rectifier
Part No. IRF6715MPBF09
OCR Text ...0 2.0 0.0 0 20 40 60 80 100 ID= 27a VDS= 20V VDS= 13V A mJ A ID = 34A 3 2 1 T J = 25C 0 2 4 6 8 10 12 14 16 18 20 T J = 125C 120 VGS, Gate -to -Source Voltage (V) Notes: Click on this section to link to the appropriate t...
Description DirectFETPower MOSFET

File Size 249.90K  /  9 Page

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    IRG4BC40F

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC40F
OCR Text ... typ. = 1.50V @VGE = 15V, IC = 27a n-channel Benefits * Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-st...
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27a) 绝缘栅双TRANSISOR(VCES和\u003d 600V电压的Vce(on)典\u003d 1.50V,@和VGE \u003d 15V的,集成电路\u003d 27a条)

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    IRG4PC50UD IRG4PC50UD-E

IRF[International Rectifier]
Part No. IRG4PC50UD IRG4PC50UD-E
OCR Text ... typ. = 1.65V @VGE = 15V, IC = 27a n-ch an nel Benefits * Generation 4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minim...
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27a)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package

File Size 212.73K  /  10 Page

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    IRG4PC50U IRG4PC50U-E

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4PC50U IRG4PC50U-E
OCR Text ... typ. = 1.65V @VGE = 15V, IC = 27a n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-...
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27a) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27a条)

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    B55N03L

List of Unclassifed Manufacturers
Part No. B55N03L
OCR Text ...VGS, ID = 250uA VGS = 10V, ID = 27a VGS = 4.5V, ID = 22A VGS = 10V, VDS = 10V VDS = 10V, ID = 27a Min Typ Max Unit 30 10 100 V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esista...
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor

File Size 413.10K  /  5 Page

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    KQB27P06

Guangdong Kexin Industrial Co.,Ltd
Part No. KQB27P06
OCR Text ...0.1 +0.2 4.57-0.2 Features -27a, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) + .2 8 .7 -00.2 Low Crss ( typical 120pF) Fast switching 100% avalanche tested +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 175 ...
Description 60V P-Channel MOSFET

File Size 60.92K  /  2 Page

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    IRF044

SEME-LAB[Seme LAB]
Part No. IRF044
OCR Text ...VGS = 0 , Tcase = 100C) 20V 44A 27a 176A 125W 1.0W/C 340mJ 4.5V/ns -55 to 150C 300C Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = 25V , L 200H , RG = 25 , Peak IL = 44A , Starting TJ = 25C 3) @ ISD 44A , di/dt 250A/s , VDD ...
Description N-CHANNEL POWER MOSFET

File Size 21.07K  /  2 Page

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