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AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
Aeroflex Circuit Techno...
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| Part No. |
ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2T ACT-9S512K8N-012L2I ACT-9S512K8N-012L2T ACT-9S512K8N-015L2I ACT-9S512K8N-015L2T ACT-9S512K8N-017L2I ACT-9S512K8N-017L2T ACT-9S512K8N-020L2I ACT-9S512K8N-020L2T ACT-9S512K8N-025L2I ACT-9S512K8N-025L2T ACT-9S512K8W-010L2I ACT-9S512K8W-010L2T ACT-9S512K8W-012L2I ACT-9S512K8W-012L2T ACT-9S512K8W-015L2I ACT-9S512K8W-015L2T ACT-9S512K8W-017L2I ACT-9S512K8W-017L2T ACT-9S512K8W-020L2I ACT-9S512K8W-020L2T ACT-9S512K8W-025L2I ACT-9S512K8W-025L2T ACT-9S512K8X-010L2I ACT-9S512K8X-010L2T ACT-9S512K8X-012L2I ACT-9S512K8X-012L2T ACT-9S512K8X-015L2I ACT-9S512K8X-015L2T ACT-9S512K8X-017L2I ACT-9S512K8X-017L2T ACT-9S512K8X-020L2I ACT-9S512K8X-020L2T ACT-9S512K8X-025L2I ACT-9S512K8X-025L2T ACT-9S512K8Y-010L2I ACT-9S512K8Y-010L2T ACT-9S512K8Y-012L2I ACT-9S512K8Y-012L2T ACT-9S512K8Y-015L2I ACT-9S512K8Y-015L2T ACT-9S512K8Y-017L2I ACT-9S512K8Y-017L2T ACT-9S512K8Y-020L2I ACT-9S512K8Y-020L2T ACT-9S512K8Y-025L2I ACT-9S512K8Y-025L2T ACT-PS512K8Y-017L2T ACT-PS512K8Y-025L2T AEROFLEXINC.-ACT-9S512K8N-017L2I ACT-PS512K8X-015L2T ACT-PS512K8Y-020L2T
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| OCR Text |
...low. Access time grades of 10ns 12ns, 15ns, 17ns, 20ns and 25ns are standard.
B
S
I NC .
I/O0-7
Pin Description I/O0-7 A0-18 WE CE OE VCC VSS NC Data I/O Address Inputs Write Enable Chip Enable Output Enable Power Supply Ground N... |
| Description |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑
512K X 8 CACHE SRAM, 15 ns, PDSO36
512K X 8 CACHE SRAM, 20 ns, PDSO36
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| File Size |
71.53K /
6 Page |
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Linear Technology, Corp.
LINER[Linear Technology]
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| Part No. |
LT1116_06 LT1116 LT1116CN8 LT1116CS8 LT1116CS8TR
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| OCR Text |
12ns, Single Supply Ground-Sensing Comparator
FEATURES
DESCRIPTIO
Ultra Fast (12ns Typ) Operates off Single 5V Supply or 5V Input Common Mode Extends to Negative Supply No Minimum Input Slew Rate Requirement Complementary ... |
| Description |
12ns, Single Supply Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C COMPARATOR, 3500 uV OFFSET-MAX, 12 ns RESPONSE TIME, PDSO8
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| File Size |
126.26K /
8 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
M366S1724CT0-C1L M366S1724CT0-C1H
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| OCR Text |
...ge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h
22 23 24 25 26 27 28 29 30 31 32 33 34
SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access time from clock @CAS... |
| Description |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
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| File Size |
54.11K /
7 Page |
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Weida Semiconductor, In...
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| Part No. |
WCFS1008V1C
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| OCR Text |
12ns cmos for optimum speed/power center power/ground pinout automatic power-down when deselected easy memory expansion with ce and oe options functional description the wcfs1008v1c is a high-performance cmos static ram organize... |
| Description |
128K x 8 Static RAM
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| File Size |
131.72K /
8 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H
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| OCR Text |
...ge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h
22 23 24 25 26 27 28 29 30 31 32 33 34
SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access time from clock @CAS... |
| Description |
PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
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| File Size |
54.11K /
7 Page |
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it Online |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
M5M5V4R01J-15 M5M5V4R01J-12
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| OCR Text |
...
FEATURES
M5M5V4R01J-12 **** 12ns(max) M5M5V4R01J-15 **** 15ns(max) * Low power dissipation Active ********** 297mW(typ) Stand by ********** 3.3mW(typ) * Single +3.3V power supply * Fully static operation : No clocks, No refresh * Test m... |
| Description |
PTSE 5C 5#16 PIN RECP 4194304位（41943041位）的CMOS静态RAM
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
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| File Size |
54.82K /
6 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
M5M5V4R04J-15 M5M5V4R04J-12
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| OCR Text |
...
FEATURES
M5M5V4R04J-12 **** 12ns(max) M5M5V4R04J-15 **** 15ns(max) * Low power dissipation Active ********** 297mW(typ) Stand by ******* 3.3mW(typ) * Single +3.3V power supply * Fully static operation : No clocks, No refresh * Common da... |
| Description |
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-23
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| File Size |
55.54K /
6 Page |
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it Online |
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