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  12ns Datasheet PDF File

For 12ns Found Datasheets File :: 1240    Search Time::1.421ms    
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    K6R4008C1D

Samsung semiconductor
Part No. K6R4008C1D
OCR Text ...al datasheet release. 2. delete 12ns speed bin. 3. delete ub ,lb releated ac characteristics and timing diagram. 4. correct read cycle time waveform(2). 1. add the lead free package type. item previous current i cc(commercial) 10ns 90ma 65...
Description 512Kx8 Bit High Speed Static RAM(5.0V Operating)

File Size 238.32K  /  10 Page

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    MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24WC03LE-1.8TE13 CAT25C03GYITE13 CAT24WC03GLITE13 CAT24WC03GWATE13 CAT25

Maxim Integrated Products
Atmel, Corp.
ON Semiconductor
TE Connectivity, Ltd.
Part No. MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24WC03LE-1.8TE13 CAT25C03GYITE13 CAT24WC03GLITE13 CAT24WC03GWATE13 CAT25040YAT3 CAT25010YAT3 CAT93C86ZD4I-GT3 CAT93C86XET2 CAT93C86ZD4E-GT2 CAT25C05ZATE13 CAT24WC64XATE13B 33LIT3C
OCR Text ... with short propagation delays (12ns typ), making them ideal for high-frequency circuits. the devices operate from a +4v to +14v single power supply and typically consume 1ma of supply cur - rent. the max17600/max17601 have standard t...
Description 4A Sink /Source Current, 12ns, Dual MOSFET Drivers
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM

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    K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R401

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R4016C1C-I K6R4016C1C-I10 K6R4016C1C-I12 K6R4016C1C-I15
OCR Text ... Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 190mA 185mA 180mA Current 200mA 195mA 190mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maxi...
Description 256Kx16 Bit High Speed Static RAM(5V Operating).

File Size 183.08K  /  11 Page

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    K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4008V1D-JC K6R4016V1D K6R4008V1D
OCR Text ...1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Preliminary Draft Data Aug. 20. 2001 Sep. ...
Description 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的)。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的)。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes

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    K6R4016V1 K6R4016V1D K64004C1D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R4016V1 K6R4016V1D K64004C1D
OCR Text ... Isb1 Item ICC(Commercial) 10ns 12ns 15ns 10ns 12ns 15ns Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 November, 3. 2001 Remark Preliminary Preliminary ICC...
Description 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 175.72K  /  9 Page

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    Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Part No. IDT7204L20DG IDT7205L20DG IDT7204L35JG IDT7203L35DG IDT7204L35SOG IDT7203L50JG 7207L25JGI
OCR Text ...(idt7208) ? ? ? ? ? high-speed: 12ns access time ? ? ? ? ? low power consumption ? active: 660mw (max.) ? power-down: 44mw (max.) ? ? ? ? ? asynchronous and simultaneous read and write ? ? ? ? ? fully expandable in both word depth and width...
Description CMOS ASYNCHRONOUS FIFO 4K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 8K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 4K X 9 OTHER FIFO, 35 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 2K X 9 OTHER FIFO, 35 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 4K X 9 OTHER FIFO, 35 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 2K X 9 OTHER FIFO, 50 ns, PQCC32
32K X 9 OTHER FIFO, 25 ns, PQCC32

File Size 111.20K  /  14 Page

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    KM644002A

Samsung Semiconductor
Part No. KM644002A
OCR Text ...et to preliminary. 0.2. delete 12ns part but add 17ns part. 0.3. relax d.c and a.c parameters and insert new parameter(icc 1 ) with the test condition. 0.3.1. insert icc 1 parameter with the test condition as address is ...
Description 1M X 4 Bit (with Oe)high-speed CMOS Static RAM

File Size 160.18K  /  8 Page

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    Chipcon
Part No. SOB8UV6484-125T-S
OCR Text ... 8ns (125 mhz), 10ns (100 mhz), 12ns (84 mhz), 15ns (67 mhz) ? low power: active 5.6w (125 mhz), 4.9w (100 mhz), 4.5w (84 mhz), 4.0w (67 mhz) ? lvttl-compatible inputs and outputs ? separate power and ground planes to improve noise immunity...
Description 8M X 64 SYNCHRONOUS DRAM MODULE, 7.5 ns, DMA144 SODIMM-144

File Size 86.11K  /  9 Page

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    Micross Components
Austin Semiconductor, Inc
Part No. AS4SD8M16DG-12/IT
OCR Text ...n mode options marking ? timing 12ns access -12 ? package(s) ? plastic 54-pin tsop dg no. 901 pin assignment (top view) general description the as4sd8m16 is a synchronous, high data rate, 134,217,728 bit dram organized as 4 x 2,097,152 word...
Description 8M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54 PLASTIC, TSOP-54

File Size 146.16K  /  14 Page

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