10ns pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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10ns Datasheet PDF File

For 10ns Found Datasheets File :: 7522 Search Time::0.953ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH32S64APHB-8 MH32S64APHB-6 MH32S64APHB-7
OCR Text	...1 A0-A9 2BANK x64 0 LVTTL 7.5ns 10ns 5.4ns 6ns Non-PARITY SPD DATA(hex) 80 08 04 0C 0A 02 40 00 01 75 A0 54 60 00 80 08 00 01 8F 04 06 01 01 00 0E A0 A0 D0 60 60 70 00 00 17 14 0F 14 17 14 2D 32 Cycle time for CL=3 SDRAM Access from ...
Description	2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
File Size	695.58K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72APHB-8 MH16S72APHB-6 MH16S72APHB-7 B00005
OCR Text	...1 A0-A9 1BANK x72 0 LVTTL 7.5ns 10ns 5.4ns 6ns ECC SPD DATA(hex) 80 08 04 0C 0A 01 48 00 01 75 A0 54 60 02 80 08 08 01 8F 04 06 01 01 00 0E A0 A0 D0 60 60 70 00 00 17 14 0F 14 17 14 2D 32 Cycle time for CL=3 SDRAM Access from Clock t...
Description	From old datasheet system 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
File Size	687.47K / 55 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns ...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns ...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min),...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min),...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns Test Condition Version -1H Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P 140 1 1 20 mA 7 5 5 30 20 mA mA -1L mA 1 Unit Note CMOS SDRAM ICC2PS CKE & CLK...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE VIH(min), CS VIH(min),...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	... IO = 0 mA CKE VIL(max), tCC = 10ns Test Condition -75 Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P 150 CMOS SDRAM Version -1H 140 1 1 20 -1L 140 Unit Note mA 1 ICC2PS CKE & ...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text	...IO = 0 mA CKE VIL(max), t CC = 10ns Test Condition -75 Operating current (One bank active) Precharge standby current in power-down mode ICC1 150 CMOS SDRAM Version -1H 140 -1L 140 Unit Note mA 1 ICC2P 1 1 20 ICC2...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY 连接器附
File Size	46.28K / 9 Page	View it Online	Download Datasheet

For 10ns Found Datasheets File :: 7522 Search Time::0.953ms
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