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10ns Datasheet PDF File

For 10ns Found Datasheets File :: 8592 Search Time::2.172ms
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				Micron Technology http://
Part No.	MT16VDDF6464H MT16VDDF6464HG-202 MT16VDDF12864HY-262 MT16VDDF12864HY-265 MT16VDDF12864HY-26A MT16VDDF12864HY-335 MT16VDDF6464HG-262 MT16VDDF6464HG-265 MT16VDDF6464HG-26A MT16VDDF6464HG-335 MT16VDDF6464HY-262 MT16VDDF6464HY-26A MT16VDDF6464HY-265 MT16VDDF6464HY-335
OCR Text	...s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s 6ns/333 MT/s 6ns/333 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s LATENCY (CL - tRCD - tRP) 2.5-3-3 2....
Description	SMALL-OUTLINE DDR SDRAM DIMM
File Size	517.80K / 31 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	SGP30N60 SGP30N6008 SGW30N60
OCR Text	... tf td(on) tr td(on) tr 10ns 10A 20A 30A 40A 50A 60A 10ns 0 10 20 30 40 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE =...
Description	Fast IGBT in NPT-technology
File Size	334.46K / 12 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS42S16160C IS42S16160C-6TL IS42S16160C-6TLI IS42S16160C-75TL IS42S16160C-75TLI IS42S16160C-7TL IS42S16160C-7TLI IS42S83200C IS42S83200C-6TL IS42S83200C-75TL IS42S83200C-7TL
OCR Text	...C2PS CKE !VIL(max), tCC = 10ns ! VIL(max), tCC = CKE & CLK Precharge Standby Current in non power-down mode ICC2N ICC2NS ICC3P ICC3PS CKE ! VIH(min), CS ! VIH(min), tCC = 10ns X 8 / X 16 Input signals are changed one...
Description	256 Mb Single Data Rate Synchronous DRAM
File Size	1,512.95K / 40 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd http://
Part No.	HSD128M72B9K HSD128M72B9K-10 HSD128M72B9K-10L HSD128M72B9K-12 HSD128M72B9K-13 HSD128M72B9K-F10 HSD128M72B9K-F10L HSD128M72B9K-F12 HSD128M72B9K-F13
OCR Text	... ICC2P ICC2PS CKE VIL(max) tCC=10ns CKE & CLK VIL(max) tCC= CKE VIH(min) Precharge standby current in non power-down mode ICC2N CS* VIH(min), time during 20ns tCC=10ns Input signals are changed one 360 mA 36 36 mA mA 1080 990 990 990 mA...
Description	Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
File Size	202.93K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IHW40T60 IHW40T60-13
OCR Text	...i n g t i m e s 0a 20a 40a 60a 10ns 100ns t f t d(off) t , s w i t c h i n g t i m e s ? ? ? ? ? ? 10ns 100ns t f t d(off) i c , collector current r g , gate resistor figure 9 . typical switching times as a function of collector current ...
Description	IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
File Size	577.35K / 13 Page	View it Online	Download Datasheet

				Taiwan Memory Technolog...
Part No.	T14L1024N-10W
OCR Text	...t14l1024n-10j soj 300mil 10ns t14l1024n-10w soj 400 mil 10ns t14l1024n-10p tsop 8x13.4mm 10ns t14l1024n-10h tsop 8x20mm 10ns t14l1024n-10c 36-ball csp 10ns general description the t14l1024n is a one...
Description	128K X 8 HIGH SPEED CMOS STATIC RAM
File Size	87.40K / 13 Page	View it Online	Download Datasheet

				Taiwan Memory Technolog...
Part No.	T14L1024A
OCR Text	...echnology, access times down to 10ns are achieved. memory expansion by banking is easily accomplished using the chip enable pins ce1 and ce2. this device is packaged in a standard 32-pin 300 mil dip/soj and 32-pin sop/tsop-i. bl...
Description	128K X 8 HIGH SPEED CMOS STATIC RAM
File Size	85.93K / 12 Page	View it Online	Download Datasheet

				Emerging Memory & Logic Solutions Inc
Part No.	EM828164PA EM828164PA-60 EM828164PA-75 EM828164PA-90
OCR Text	...in) Io = 0mA CKE VIL(max), tcc =10ns VIL(max), tcc = Test Condition -60 Operating Current (One Bank Active) -75 -90 Unit IDD1 50 40 35 mA Precharge Standby Current in power-down mode IDD2P IDD2PS IDD2N 0.3 mA 0.3 10 ...
Description	128M: 8M x 16 Mobile SDRAM
File Size	618.80K / 48 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd Hanbit Electronics Co.,...
Part No.	HMD32M64D8A-10 HMD32M64D8A-10L HMD32M64D8A-12 HMD32M64D8A-13 HMD32M64D8A-F10 HMD32M64D8A-F10L HMD32M64D8A-F12 HMD32M64D8A-F13 HSD32M64D8A
OCR Text	...O = 0mA ICC2P CKE VIL(max) tCC=10ns CKE & CLK VIL(max) tCC= CKE VIH(min) ICC2N Precharge standby current in one time during 20ns non power-down mode ICC2NS CKE VIH(min) CLK VIL(max), tCC= 14 mA CS* VIH(min), tCC=10ns 16 2 mA 2 mA 120 ...
Description	Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
File Size	80.73K / 10 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M12S128168A M12S128168A-10TG
OCR Text	...max) = 4.6V AC for pulse width 10ns acceptable. 2. VIL(min) = -1.5V AC for pulse width 10ns acceptable. 3. Any input 0V VIN VDD + 0.3V, all other pins are not under test = 0V. 4. Dout is disabled , 0V VOUT VDD. CAPACITANCE (VDD = 2...
Description	2M x 16 Bit x 4 Banks Synchronous DRAM
File Size	945.36K / 44 Page	View it Online	Download Datasheet

For 10ns Found Datasheets File :: 8592 Search Time::2.172ms
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