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				Vishay Siliconix
Part No.	DG2736
OCR Text	...rtable media player ? handheld test instruments functional block diagram and pin configuration gnd nc2 dg27 3 5 miniqfn-10l 6 7 2 1 v+ no1 com1 nc1 in1 3 4 5 in2 com2 no2 8 9 10 pin 1: long lead device markin g : ax for dg27 3 5 device mar...
Description	(DG2735 / DG2736) Dual SPDT Analog Switch
File Size	175.63K / 9 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GS-HF
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v v gs =-10v, i d =-20a - - 25 m ? v gs =-4.5v, i d =-15a - - 30 m ? v gs(th) gate threshold voltage v ...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	91.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GP-HF AP9579GP-HF14
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v v gs =-10v, i d =-20a - - 25 m ? v gs =-4.5v, i d =-15a - - 30 m ? v gs(th) gate threshold voltage v ...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	92.00K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GM-HF AP9579GM-HF14
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-7a - 18.2 25 m v gs =-4.5v, i d =-5a ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	56.22K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GJ-HF AP9579GJ-HF14
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v v gs =-10v, i d =-20a - - 25 m ? v gs =-4.5v, i d =-15a - - 30 m ? v gs(th) gate threshold voltage v ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance 45 A, 60 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
File Size	90.61K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD467
OCR Text	....5 1.0 -- -- Unit V V V A test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown vol...
Description	Silicon NPN Epitaxial
File Size	29.20K / 6 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	AP2328GN-HF
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =4a - - 55 m ? v gs =4.5v, i d =3a - - 60 m ? v gs =2.5v, i d =2a - - 90 m ? v gs(th) ga...
Description	Advanced Power MOSFETs
File Size	96.92K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2328GN-HF
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =4a - - 55 m ? v gs =4.5v, i d =3a - - 60 m ? v gs =2.5v, i d =2a - - 90 m ? v gs(th) ga...
Description	Capable of 2.5V Gate Drive, Small Outline Package
File Size	90.97K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP20T15GP-HF
OCR Text	...ise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 70 m v gs =4.5v, i d =10a - - 12...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	93.54K / 4 Page	View it Online	Download Datasheet

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