1 UD3005 p-ch 30v fast switching mosfets symbol parameter rating units 10s steady state v ds drain-source voltage -30 v v gs gate-sou r ce voltage 25 v i d @t c =25 continuous drain current, v gs @ -10v 1 -45 a i d @t c =100 continuous drain current, v gs @ -10v 1 -30 a i d @t a =25 continuous drain current, v gs @ -10v 1 -15 -9.6 a i d @t a =70 continuous drain current, v gs @ -10v 1 -12 -7.7 a i dm pulsed drain current 2 -150 a eas single pulse avalanche energy 3 273 mj i as avalanche current -50 a p d @t c =25 total power dissipation 4 45 w p d @t a =25 total power dissipation 4 5 2.0 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r ja thermal resistance junction-ambient 1 (t 10s) --- 25 /w r jc thermal resistance junction-case 1 --- 2.8 /w id -30v 15m ? -45a the UD3005 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD3005 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on)
2 p-ch 30v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =-1ma --- -0.0232 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-30a --- 12 15 m v gs =-4.5v , i d =-15a --- 20 25 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient --- 4.6 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- -1 ua v ds =-24v , v gs =0v , t j =55 --- --- -5 i gss gate-source leakage current v gs = 25v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-30a --- 30 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 9 18 q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-15a --- 22 30.8 nc q gs gate-source charge --- 8.7 12.2 q gd gate-drain charge --- 7.2 10 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 i d =-15a --- 8 16 ns t r rise time --- 73.7 132 t d(off) turn-off delay time --- 61.8 123 t f fall time --- 24.4 48 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 2215 3100 pf c oss output capacitance --- 310 434 c rss reverse transfer capacitance --- 237 330 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-24a 63 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- -45 a i sm pulsed source current 2,6 --- --- -150 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1 v t rr reverse recovery time i f =-15a , di/dt=100a/s , t j =25 --- 19 --- ns q rr reverse recovery charge --- 9 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-50a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD3005
3 p-ch 30v fast switching mosfets 0 4 8 12 0.00 0.25 0.50 0.75 1.00 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0 9 18 27 36 45 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-15v i d =-15a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD3005
4 p-ch 30v fast switching mosfets 10 100 1000 10000 1 5 9 13172125 -v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) 0.02 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.01 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UD3005
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