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| SMD Type Complementary Enhancement Mode MOS Transistors KHC2300 Transistors IC Features High-speed switching No secondary breakdown. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current peak drain current Ts = 80 *2 Ts = 80 ; *3 Tamb = 25 ;*4 Ptot *1 Symbol VDSS VGS ID IDM N-Channel 300 20 340 14 1.6 1.8 0.9 1.2 Tstg Tj Rth j-s -55 to 150 -55 to 150 43 K/W W P-Channel -300 20 -235 -0.9 Unit V V A A total power dissipation Tamb = 25 ; * 5 Tamb = 25 storage temperature operating junction temperature thermal resistance from junction to soldering point ; *6 *1. Ts is the temperature at the soldering point of the drain leads. *2. Pulse width and duty cycle limited by maximum junction temperature. *3. Maximum permissible dissipation per MOS transistor. (So both devices may be loaded up to 1.6 W at the same time). *4. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. *5. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. *6. Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. www.kexin.com.cn 1 SMD Type KHC2300 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on time turn-off time Symbol V(BR)DSS VGSth IDSS IGSS RDSon Ciss Coss Crss QG QGS QGD ton toff Testconditons VGS = 0; ID = 10 VGS = 0; ID = -10 A A Type N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Transistors IC Min 300 -300 0.8 -0.8 Typ Max Unit V V VGS = VDS; ID = 1 mA VGS = VDS; ID = -1 mA VGS = 0; VDS = 240 V VGS = 0; VDS = -240 V VGS = 20 V; VDS = 0 2 -2 100 -100 100 100 8 17 57 45 15 15 2.6 3 2097 2137 75 68 527 674 2.5 4 17 25 10 10 30 35 V V nA nA nA nA VGS = 10 V; ID = 170m A VGS = -10 V; ID = -115m A VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = -50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = -50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = -50 V; f = 1 MHz VGS = 10 V; VDS = 50 V; ID = 170m A VGS = 10 V; VDS = -50 V; ID =-115m A VGS = 10 V; VDS = 50 V; ID = 170m A VGS = -10 V; VDS = -50 V; ID = -115m A VGS = 10 V; VDS = 50 V; ID = 170m A VGS = -10 V; VDS = -50 V; ID = -115m A VGS =0 to 10 V; VDD=50V;ID=170mA VGS = 0 to -10 V; VDD = -50 V;ID = -115mA VGS=10 to 0 V;VDD=50V;ID=170mA VGS=-10 to 0 V;VDD=-50V;ID=-115mA pF pF pF nC nC nC nC nC nC ns ns ns ns 2 www.kexin.com.cn |
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