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| ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A FEATURES * Center amplifying gate * High surge current capability * Low thermal impedance * High speed performance * Compression bonding * Lead (Pb)-free TO-209AE (TO-118) RoHS COMPLIANT * Designed and qualified for industrial level TYPICAL APPLICATIONS * Inverters PRODUCT SUMMARY IT(AV) 330 A * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ TEST CONDITIONS VALUES 330 TC 75 518 11 000 11 520 605 550 400 to 800 15 - 40 to 125 V s C kA2s A UNITS A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST333S 08 800 900 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 50 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94377 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage VR Voltage before turn-on VD Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 840 650 430 140 50 VDRM 50 50 10/0.47 600 450 230 60 1280 1280 1090 490 50 VDRM - 1040 910 730 250 5430 2150 1080 400 50 VDRM - 4350 1560 720 190 V A/s 75 10/0.47 C /F A 75 50 10/0.47 75 50 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 63 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 330 75 518 11 000 11 520 9250 Sinusoidal half wave, initial TJ = TJ maximum 9700 605 550 430 390 6050 1.96 0.91 0.92 0.58 0.58 600 1000 m V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt = 200 V/s VALUES 1000 1.0 s 15 UNITS A/s Vishay High Power Products Maximum turn-off time tq BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.10 0.03 48.5 (425) 535 UNITS C K/W N*m (lbf * in) g TO-209AE (TO-118) Document Number: 94377 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.011 0.013 0.017 0.025 0.041 RECTANGULAR CONDUCTION 0.008 0.014 0.018 0.026 0.042 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Maximum Allowable Case T emperature (C) Maximum Allowable Cas T e emperature (C) 130 120 110 Conduc tion Angle 130 120 110 100 90 80 70 60 0 100 S 333SS T eries RthJC (DC) = 0.10 K/ W S 333SS T eries RthJC (DC) = 0.10 K/ W Conduc tion Period 100 90 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A) 30 60 90 120 180 30 60 90 120 200 300 180 400 DC 500 600 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 500 /W 1K 0.0 = A hS Rt W K/ 06 0. 03 0. 450 400 350 300 250 200 180 120 90 60 30 RMS Limit 0. 08 K/ W 0. 12 K/ W 0.1 6K / 0.2 W K/ W W K/ ta el -D R 0.3 K/ W Conduction Angle 150 100 50 0 0 50 100 150 200 250 300 0.5 K/ W S 333S S T eries T = 125C J 350 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A Maximum Average On-s tate Power Loss (W) 700 600 Vishay High Power Products 500 400 DC 180 120 90 60 30 0. 03 0. 06 K/ W K/ W R A S th = 01 0. W K/ ta el -D 0.1 2 K/ W R 300 RMSLimit Conduc tion Period 0.2 K/ W 200 100 0 0 100 200 300 400 500 S 333S S T eries T = 125C J 0.3 K/ W 0. 5 K / W 600 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 4 - On-State Power Loss Characteristics Peak Half S Wave On-state Current (A) ine 10000 9000 8000 7000 6000 5000 4000 1 Instantaneous On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 10000 T = 25C J T = 125C J 1000 S 333SS T eries S 333SS T eries 100 10 100 0 1 2 3 4 5 6 7 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Instantaneous On-state Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Voltage Drop Characteristics Maximum Non R epetitive S urge Current Vers Pulse T us rain Duration. Control 10000 Of Conduction May Not Be Maintained. Initial T = 125C J 9000 No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 S 333S S T eries T rans ient T hermal Impedance Z thJC (K/ W) Peak Half S Wave On-state Current (A) ine 11000 1 S teady S tate Value R thJC = 0.10 K/ W (DC Operation) 0.1 0.01 S 333S S T eries 4000 0.01 0.1 Pulse T rain Duration (s) 1 0.001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitve Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94377 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A Maximum R everse R ecovery Charge - Qrr (C) Maximum R everse R ecovery Current - Irr (A) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 I T M = 500 A 300 A 200 A 100 A 50 A 180 160 140 120 100 80 60 40 20 10 S 333S S T eries T = 125 C J IT = 500 A M 300 A 200 A 100 A 50 A S 333S S T eries T = 125 C J 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 R ate Of Fall Of On-state Current - di/ dt (A/ s) R ate Of Fall Of On-state Current - di/ dt (A/ s) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics 1E4 Peak On-state Current (A) 1000 500 400 200 100 50 Hz 1000 1500 500 50 Hz 400 200 100 1E3 1500 2000 2500 3000 1E2 5000 tp S nubb er circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 333SS T eries S inusoidal pulse T = 50C C 2000 2500 3000 S nubb er circuit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 333SS T eries S inusoida l pulse T = 75C C tp 1E1 1E 1 1E2 1E 3 1E4 1E 4 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 11 - Frequency Characteristics 1E4 Peak On-state Current (A) 1E3 1000 1500 2000 2500 500 100 400 200 50 Hz 500 400 200 100 50 Hz 1E2 3000 S nub b er circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 333SS T eries T ezoidal p ulse rap T = 50C C di/ d t = 50A/ s 1000 1500 2000 2500 3000 S nub ber c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 333SS T eries T pezoidal pulse ra T = 75C C di/ dt = 50A/s 1E1 1E1 1E2 1E3 1E4 1E4 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 12 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94377 Revision: 30-Apr-08 ST333SP Series Inverter Grade Thyristors (Stud Version), 330 A 1E4 Vishay High Power Products Peak On-state Current (A) 1E3 1000 1500 2000 2500 3000 400 500 200 100 50 Hz 400 500 200 100 50 Hz S nub ber c irc uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 1E2 S nub ber circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 333SS T eries T rapezoid al pulse T = 50C C di/ dt = 100A/ s 1000 1500 2000 2500 3000 tp tp S 333SS T eries T rapezoidal pulse T = 75C C di/ dt = 100A/ s 1E1 1E1 1E 2 1E3 1E4 4 1E 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 1E 5 S 333SS T eries Rectangular pulse d i/ dt = 50A/ s 20 joules p er pulse 3 5 10 Peak On-state Current (A) tp 1E 4 2 3 5 20 joules p er pulse 10 1E 3 0.3 0.2 1 0.5 2 1 0.5 0.4 0.3 1E 2 S 333SS T eries S inusoidal pulse 0.2 tp 1E 1 1E1 1E2 1E3 1E 1E4 4 1E1 1E 1 1E2 1E3 1E 4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) R ommended load line for ec rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C T j=25 C T j=125 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 333S S T eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94377 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST333SP Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 330 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 33 2 - 3 3 S 4 08 5 P 6 F 7 L 8 0 9 P 10 Thyristor Essential part number 3 = Fast turn-off S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4" 16UNF-2A Reapplied dV/dt code (for tq test condition) F = 200 V/s tq code (L = 15 s) 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 10 - Lead (Pb)-free Note: For metric device M24 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94377 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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