PART |
Description |
Maker |
MG50Q2YS40 E002356 |
From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) WIRE, ETFE, TEFZEL, 12AWG, BLACK, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
|
Toshiba Semiconductor Toshiba Corporation
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
50MT060WHA 50MT060WHTA |
HALF-BRIDGE IGBT MTP
|
International Rectifier
|
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
APTGT20H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 32 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT300H60G |
Full - Bridge Trench Field Stop IGBT Power Module 430 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT200SK60TG |
Buck chopper Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT450DA60G |
Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT100DU60TG |
Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|