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  mtp igbt power module primary Datasheet PDF File

For mtp igbt power module primary Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    VS-150MT060WDF

Vishay Siliconix
Part No. VS-150MT060WDF
Description mtp igbt power module primary Dual Forward

File Size 193.96K  /  11 Page

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    VS-150MT060WDF-P

Vishay Siliconix
Part No. VS-150MT060WDF-P
Description mtp PressFit igbt power module primary Dual Forward

File Size 264.87K  /  11 Page

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    MG50Q2YS40 E002356

Toshiba Semiconductor
Toshiba Corporation
Part No. MG50Q2YS40 E002356
Description From old datasheet system
N CHANNEL igbt (HIGH power SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL igbt (HIGH power SWITCHING / MOTOR CONTROL APPLICATIONS)
WIRE, ETFE, TEFZEL, 12AWG, BLACK, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes

File Size 252.26K  /  5 Page

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    IXYS, Corp.
Part No. IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z
Description TRANSISTOR | igbt power module | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | igbt power module | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET power module | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁)
TRANSISTOR | igbt power module | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| igbt功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c

File Size 540.18K  /  6 Page

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    SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60DN2
Description igbt power module (power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL igbt

File Size 122.21K  /  9 Page

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    BSM75GD120DN2 075D12N2 C67070-A2516-A67

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSM75GD120DN2 075D12N2 C67070-A2516-A67
Description igbt power module (Solderable power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL igbt
From old datasheet system

File Size 185.11K  /  9 Page

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    FZ800R33KF1 FS150R12KF4 FD400R12KF4

Infineon Technologies AG
Part No. FZ800R33KF1 FS150R12KF4 FD400R12KF4
Description TRANSISTOR | igbt power module | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | igbt power module | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | igbt power module | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| igbt功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c

File Size 232.37K  /  4 Page

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    MG300Q2YS65H

Toshiba Semiconductor
Toshiba Corporation
Part No. MG300Q2YS65H
Description 300 A, 1200 V, N-CHANNEL igbt
igbt module Silicon N Channel igbt High power & High Speed Switching Applications
TOSHIBA igbt module Silicon N Channel igbt

File Size 156.72K  /  6 Page

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    MG800J2YS50A

Toshiba Semiconductor
Part No. MG800J2YS50A
Description igbt module Silicon N Channel igbt High power Switching Applications Motor Control Applications
TOSHIBA igbt module Silicon N Channel igbt

File Size 206.63K  /  7 Page

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    MG600J2YS60A

TOSHIBA[Toshiba Semiconductor]
Part No. MG600J2YS60A
Description igbt module Silicon N Channel igbt High power Switching Applications Motor Control Applications
TOSHIBA igbt module Silicon N Channel igbt

File Size 186.79K  /  9 Page

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For mtp igbt power module primary Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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