| PART |
Description |
Maker |
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| HYB18T1G160BC |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda
|
