| PART |
Description |
Maker |
| GS71116AJ GS71116ATP GS71116AU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| GS71116TJ GS71116TP GS71116TU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| N01L63W3A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
| MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
| MCM67A618B MCM67A618BFN10 MCM67A618BFN12 MCM67A618 |
64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| GS72116AJ GS72116AJ-10 GS72116AJ-10I GS72116AJ-12 |
8ns 128K x 16 2Mb asynchronous SRAM
ACB 9C 9#16 SKT RECP WALL
ACB 5C 5#16S SKT RECP WALL
ACB 10C 10#16 PIN RECP WALL
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum Alloy; Series:ACA-B Reverse Bayonet; No. of Contacts:2; Connector Shell Size:12S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
128K x 16 2Mb Asynchronous SRAM 128K的16异步SRAMMb
ACB 19C 19#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 4C 4#16 SKT RECP WALL 128K的16异步SRAMMb
ACB 8C 8#16 SKT RECP WALL 128K的16异步SRAMMb
|
http://
ETC[ETC]
GSI Technology
Electronic Theatre Controls, Inc.
|
