| PART |
Description |
Maker |
| GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc.
GSI Technology
|
| GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM
133MHz 8.5ns 256K x 36 9Mb sync burst SRAM
150MHz 7.5ns 256K x 36 9Mb sync burst SRAM
166MHz 7ns 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100
250MHz 512K x 18 9Mb sync burst SRAM
225MHz 512K x 18 9Mb sync burst SRAM
200MHz 512K x 18 9Mb sync burst SRAM
166MHz 512K x 18 9Mb sync burst SRAM
150MHz 512K x 18 9Mb sync burst SRAM
133MHz 512K x 18 9Mb sync burst SRAM
150MHz 256K x 32 9Mb sync burst SRAM
166MHz 256K x 32 9Mb sync burst SRAM
225MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 32 9Mb sync burst SRAM
133MHz 256K x 36 9Mb sync burst SRAM
150MHz 256K x 36 9Mb sync burst SRAM
166MHz 256K x 36 9Mb sync burst SRAM
200MHz 256K x 36 9Mb sync burst SRAM
225MHz 256K x 36 9Mb sync burst SRAM
133MHz 256K x 32 9Mb sync burst SRAM
200MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
