| PART |
Description |
Maker |
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| SST12LP14A-QVCE-K SST12LP14A SST12LP14A-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12CP11-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
Microchip Technology
|
| SST12LP14C-QVCE-K SST12LP14C SST12LP14C-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| ACA2784 |
1 GHz, 21 dB Gain High Output Power DoublerAmplifier
|
ANADIGICS, Inc
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| SST12LF02 SST12LF02-QXCE |
2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
|
Microchip Technology
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
