PART |
Description |
Maker |
HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16),5伏只,闪 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16),5伏只,闪
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
HY29F800 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
Hynix Semiconductor
|
KM23C8105D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TM |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
KM23C8105ET KM23C8105DET KM23C8105DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位)2兆位米16位).0伏的CMOS只,同时作业闪存,和 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Xilinx, Inc. Spansion, Inc.
|
EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI |
1Mx8 Static RAM CMOS, Module
|
White Electronic Designs Corporation
|