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  1mx8 512kx16 Datasheet PDF File

For 1mx8 512kx16 Found Datasheets File :: 44    Search Time::3ms    
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    HY29F800

Hynix Semiconductor
Part No. HY29F800
OCR Text 1mx8/512kx16), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase - Minimizes system-level power requirements n High Performance - Access times as fast as 55 ns n Low Power Consumption - 20 mA typical active read curr...
Description 8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory

File Size 441.16K  /  40 Page

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    ACTSF2816 ACT-SF2816N-26F18C ACT-SF2816N-26F18I ACT-SF2816N-26F18M ACT-SF2816N-26F18Q ACT-SF2816N-26F18T ACT-SF2816N-26P

Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Part No. ACTSF2816 ACT-SF2816N-26F18C ACT-SF2816N-26F18I ACT-SF2816N-26F18M ACT-SF2816N-26F18Q ACT-SF2816N-26F18T ACT-SF2816N-26P3C ACT-SF2816N-26P3I ACT-SF2816N-26P3M ACT-SF2816N-26P3Q ACT-SF2816N-26P3T ACT-SF2816N-26P7C ACT-SF2816N-26P7I ACT-SF2816N-26P7M ACT-SF2816N-26P7Q ACT-SF2816N-26P7T ACT-SF2816N-37F18C ACT-SF2816N-37F18I ACT-SF2816N-37F18M ACT-SF2816N-37F18Q ACT-SF2816N-37F18T ACT-SF2816N-37P3C ACT-SF2816N-37P3I ACT-SF2816N-37P3M ACT-SF2816N-37P3Q ACT-SF2816N-37P3T ACT-SF2816N-37P7C ACT-SF2816N-37P7I ACT-SF2816N-37P7M ACT-SF2816N-37P7Q ACT-SF2816N-37P7T ACT-SF2816N-39F18C ACT-SF2816N-39F18I ACT-SF2816N-39F18M ACT-SF2816N-39F18Q ACT-SF2816N-39F18T ACT-SF2816N-39P3C ACT-SF2816N-39P3I ACT-SF2816N-39P3M ACT-SF2816N-39P3Q ACT-SF2816N-39P3T ACT-SF2816N-39P7C ACT-SF2816N-39P7I ACT-SF2816N-39P7M ACT-SF2816N-39P7Q ACT-SF2816N-39P7T
OCR Text ...User Configurable as 512KX8 AND 1mx8 Respectively I Low Power CMOS I Input and Output TTL Compatible Design I MIL-PRF-38534 Compliant MCMs Available I Decoupling Capacitors and Multiple Grounds for Low Noise I Industrial and Military Temper...
Description ACT-SF2816 High Speed 128Kx16 SRAM / 512kx16 FLASH Multichip Module 行为SF2816高28Kx16的SRAM / 512kx16闪存多芯片模
Serial-in shift registers 14-SO 0 to 70 行为SF2816高28Kx16SRAM / 512kx16闪存多芯片模
Serial-in shift registers 14-SOIC 0 to 70 行为SF2816高28Kx16SRAM / 512kx16闪存多芯片模
CONNECTOR
90DGR MD50 MALE TO MD50 MALE - 6 FT
90DGR MD68 MALE TO 90DGR MD50M - 6FT
SCSI-5 MALE HPDB50 MALE CABLE
SCSI-5 M/M CABLE 6 FT
ULTRA2 LVD SCSI CABLE 3FTMD68
VHDCI TO CENTRONICS SCSI CABLE 3FT
Serial-out shift registers 16-SOIC 0 to 70

File Size 180.85K  /  11 Page

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    MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F

MCNIX[Macronix International]
Part No. MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F800TTC-90 MX29F800TTI-12 MX29F800TTI-90 MX29F800BTC-70 MX29F800BTC-90 29F800 MX29F800B MX29F800BMC-12 MX29F800BMC-70 MX29F800BMC-90 MX29F800BTA-12 MX29F800BTA-90 MX29F800BTC-12 MX29F800TTA-12 MX29F800TTA-90
OCR Text 1mx8/512kx16] CMOS FLASH MEMORY FEATURES * 1,048,576 x 8/524,288 x 16 switchable * Single power supply operation - 5.0V only operation for read, erase and program operation * Fast access time: 70/90/120ns * Low power consumption - 50mA ...
Description 8M-BIT [1mx8/512kx16] CMOS FLASH MEMORY

File Size 691.27K  /  42 Page

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    WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WEDPNF8M721V-1012BM

White Electronic Designs
ETC[ETC]
Part No. WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WEDPNF8M721V-1012BM WEDPNF8M721V-1015BC WEDPNF8M721V-1015BI WEDPNF8M721V-1015BM WEDPNF8M721V-1210BC WEDPNF8M721V-XBX WEDPNF8M721V-1210BI WEDPNF8M721V-1210BM WEDPNF8M721V-1212BC WEDPNF8M721V-1212BI WEDPNF8M721V-1212BM WEDPNF8M721V-1215BC WEDPNF8M721V-1215BI WEDPNF8M721V-1215BM
OCR Text ...S n n n n User Configurable as 1mx8 or 512kx16 Access Times of 100, 120, 150ns 3.3 Volt for Read and Write Operations 1,000,000 Erase/Program Cycles * This data sheet describes a product that may or may not be under development and is s...
Description 8Mx72 Synchronous DRAM 8Mb Flash Mixed Module Multi-Chip Package

File Size 1,271.92K  /  42 Page

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    Samsung Electronics
Part No. K3N4C1000D-DC K3N4C1000D-GC
OCR Text 1mx8 /512kx16) CMOS MASK ROM FEATURES * Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) * Fast access time : 100ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Max...
Description 8M-Bit CMOS Mask ROM

File Size 60.98K  /  3 Page

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    Samsung Electronics
Part No. K3N4C1000D-TC K3N4C1000D-TE
OCR Text 1mx8 /512kx16) CMOS MASK ROM FEATURES * Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) * Fast access time : 100ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Ma...
Description 8M-Bit CMOS Mask ROM

File Size 59.14K  /  3 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YBC-T755 K5A3X80YTC K5A3380YBC-T855 K5A3380YTC-T855
OCR Text ...Dual Bank NOR Flash Memory / 8M(1mx8/512kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics....
Description MCP MEMORY

File Size 620.40K  /  45 Page

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    KM23V8105D KM23V8105DG KM23V8105G

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23V8105D KM23V8105DG KM23V8105G
OCR Text 1mx8 /512kx16) CMOS MASK ROM FEATURES * Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) * Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.) * 4 Words / 8 bytes pag...
Description 8M-Bit (1mx8 /512kx16) CMOS MASK ROM

File Size 88.59K  /  5 Page

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    SAMSUNG
Part No. K5A3280YBA
OCR Text 1mx8/512kx16) Full CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial Draft Final Specification Draft Date August 28, 2001 Remark Preliminary November 13, 2001 Final The attached datasheets are provided by SA...
Description 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1mx8/512kx16) Full CMOS SRAM

File Size 557.59K  /  47 Page

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    K5P2880YCM

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5P2880YCM
OCR Text 1mx8/512kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial issue. Draft Date Jun. 11th 2001 Remark Advanced Information Note : For more detailed features and specifications including FAQ, please refer to ...
Description Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1mx8/512kx16 Full CMOS SRAM

File Size 549.77K  /  29 Page

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For 1mx8 512kx16 Found Datasheets File :: 44    Search Time::3ms    
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