| PART |
Description |
Maker |
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
| IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1 |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
|
IRF[International Rectifier]
|
